| Indication of current-injection lasing from an organic semiconductor |
51 |
| A 271.8 nm deep-ultraviolet laser diode for room temperature operation |
48 |
| Hybrid quantum systems based on magnonics |
47 |
| U-shaped photonic quasi-crystal fiber sensor with high sensitivity based on surface plasmon resonance |
29 |
| Omnidirectional tunable terahertz analog of electromagnetically induced transparency realized by isotropic vanadium dioxide metasurfaces |
28 |
| High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer |
20 |
| Low-pressure CVD-grown beta-Ga2O3 bevel-field-plated Schottky barrier diodes |
20 |
| Reduction of threading dislocation density and suppression of cracking in sputter-deposited AIN templates annealed at high temperatures |
19 |
| Design and exploration of semiconductors from first principles: A review of recent advances |
19 |
| Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence |
18 |
| Operation of BaSi2 homojunction solar cells on p(+)-Si(111) substrates and the effect of structure parameters on their performance |
18 |
| Mid-infrared Er:CaF2-SrF2 bulk laser Q-switched by MXene Ti3C2Tx absorber |
17 |
| Si-doped beta-(Al0.26Ga0.74)(2)O-3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy |
17 |
| Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation |
16 |
| p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111) |
16 |
| GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition |
15 |
| High-output-power and high-temperature operation of blue GaN-based vertical-cavity surface-emitting laser |
15 |
| The benefits of an asymmetric tri-stable energy harvester in low-frequency rotational motion |
15 |
| All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer |
14 |
| Design and optimization of a flexible water-based microwave absorbing metamaterial |
14 |
| Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of beta-(Al-x,Ga1-x)(2)O-3/beta-Ga2O3 heterostructures |
14 |
| First-principle calculations of electronic structures and polar properties of (kappa,epsilon)-Ga2O3 |
14 |
| 6 kW/cm(2) UVC laser threshold in optically pumped lasers achieved by controlling point defect formation |
13 |
| Ultra-high-speed graphene optical modulator design based on tight field confinement in a slot waveguide |
13 |
| Demonstration of high-responsivity epitaxial beta-Ga2O3/GaN metal-heterojunction-metal broadband UV-A/UV-C detector |
12 |
| Effects of postmetallization annealing on interface properties of Al2O3/GaN structures |
12 |
| True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy |
12 |
| Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations |
12 |
| 2 mu m high-power dissipative soliton resonance in a compact sigma-shaped Tm-doped double-clad fiber laser |
12 |
| Tunable ultra-narrowband and wide-angle graphene-based perfect absorber in the optical communication region |
11 |
| Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition |
11 |
| A passively Q-switched compact Er:Lu2O3 ceramics laser at 2.8 mu m with a graphene saturable absorber |
11 |
| Neuromorphic computing enabled by physics of electron spins: Prospects and perspectives |
11 |
| Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors |
11 |
| Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes |
10 |
| Simple way of finding Ba to Si deposition rate ratios for high photoresponsivity in BaSi2 films by Raman spectroscopy |
10 |
| Watt-class blue vertical-cavity surface-emitting laser arrays |
10 |
| Subwavelength focusing of a cylindrically symmetric plano-concave lens based on a one-dimensional Thue-Morse photonic quasicrystal |
10 |
| Top-down fabrication of GaN nano-laser arrays by displacement Talbot lithography and selective area sublimation |
10 |
| Broadband tunable electromagnetically induced transparency analogue metamaterials based on graphene in terahertz band |
10 |
| Exfoliation of AIN film using two-dimensional multilayer hexagonal BN for deep-ultraviolet light-emitting diodes |
10 |
| Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability |
9 |
| A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 m Omega . cm(2) on-resistance |
9 |
| Grating-assisted ultra-narrow multispectral plasmonic resonances for sensing application |
9 |
| High-temperature ferromagnetism in new n-type Fe-doped ferromagnetic semiconductor (In, Fe) Sb |
9 |
| A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor |
9 |
| Tunable and multi-channel perfect absorber based on graphene at mid-infrared region |
9 |
| Highly sensitive refractive-index sensor based on strong magnetic resonance in metamaterials |
9 |
| Dissipative soliton generation in Er-doped fibre laser using SnS2 as a saturable absorber |
9 |
| Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion |
9 |
