Journal Of Inorganic Materials

Journal Of Inorganic Materials

无机材料杂志

  • 4区 中科院分区
  • Q2 JCR分区

期刊简介

《Journal Of Inorganic Materials》是由Science Press出版社于1986年创办的英文国际期刊(ISSN: 1000-324X),该期刊长期致力于材料科学:硅酸盐领域的创新研究,主要研究方向为工程技术-材料科学:硅酸盐。作为SCIE收录期刊(JCR分区 Q2,中科院 4区),本刊采用OA未开放获取模式(OA占比0.0023...%),以发表材料科学:硅酸盐领域等方向的原创性研究为核心(研究类文章占比89.88%%)。凭借严格的同行评审与高效编辑流程,期刊年载文量精选控制在168篇,确保学术质量与前沿性。成果覆盖Web of Science、Scopus等国际权威数据库,为学者提供推动材料科学领域高水平交流平台。

投稿咨询

投稿提示

Journal Of Inorganic Materials审稿周期约为 约1.0个月 。该刊近年未被列入国际预警名单,年发文量约168篇,录用竞争适中,主题需确保紧密契合材料科学前沿。投稿策略提示:避开学术会议旺季投稿以缩短周期,语言建议专业润色提升可读性。

  • 材料科学 大类学科
  • Chinese 出版语言
  • 是否预警
  • SCIE 期刊收录
  • 168 发文量

中科院分区

中科院 SCI 期刊分区 2023年12月升级版

Top期刊 综述期刊 大类学科 小类学科
材料科学
4区
MATERIALS SCIENCE, CERAMICS 材料科学:硅酸盐
4区

中科院 SCI 期刊分区 2022年12月升级版

Top期刊 综述期刊 大类学科 小类学科
材料科学
4区
MATERIALS SCIENCE, CERAMICS 材料科学:硅酸盐
4区

JCR分区

按JIF指标学科分区 收录子集 分区 排名 百分位
学科:MATERIALS SCIENCE, CERAMICS SCIE Q2 15 / 31

53.2%

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:MATERIALS SCIENCE, CERAMICS SCIE Q3 17 / 31

46.77%

CiteScore

CiteScore SJR SNIP CiteScore 排名
CiteScore:2.9 SJR:0.346 SNIP:0.433
学科类别 分区 排名 百分位
大类:Materials Science 小类:General Materials Science Q3 277 / 463

40%

大类:Materials Science 小类:Inorganic Chemistry Q3 51 / 79

36%

期刊发文

  • Double Dielectric Layer Metal-oxide Memristor: Design and Applications

    Author: You Junqi; Li Ce; Yang Dongliang; Sun Linfeng

    Journal: JOURNAL OF INORGANIC MATERIALS. 2023; Vol. 38, Issue 4, pp. 387-398. DOI: 10.15541/jim20220760

  • Research Progress of Flexible Neuromorphic Transistors

    Author: Yang Yang; Cui Hangyuan; Zhu Ying; Wan Changjin; Wan Qing

    Journal: JOURNAL OF INORGANIC MATERIALS. 2023; Vol. 38, Issue 4, pp. 367-377. DOI: 10.15541/jim20220700

  • Fabrication and Microstructure of Gd2O2S:Tb Scintillation Ceramics from Water-bath Synthesized Nano-powders: Influence of H2SO4/Gd2O3 Molar Ratio

    Author: Wu Junlin; Ding Jiyang; Huang Xinyou; Zhu Danyang; Huang Dong; Dai Zhengfa; Yang Wenqin; Jiang Xingfen; Zhou Jianrong; Sun Zhijia; Li Jiang

    Journal: JOURNAL OF INORGANIC MATERIALS. 2023; Vol. 38, Issue 4, pp. 452-460. DOI: 10.15541/jim20220542

  • Defect-induced Analogue Resistive Switching Behavior in FeOx-based Memristor and Synaptic Paired-pulse Facilitation Feature

    Author: Wang Tongyu; Ran Haofeng; Zhou Guangdong

    Journal: JOURNAL OF INORGANIC MATERIALS. 2023; Vol. 38, Issue 4, pp. 437-444. DOI: 10.15541/jim20220721

  • Enhanced Degradation of Methyl Orange with CoFe2O4@Zeolite Catalyst as Peroxymonosulfate Activator: Performance and Mechanism

    Author: Wang Lei; Li Jianjun; Ning Jun; Hu Tianyu; Wang Hongyang; Zhang Zhanqun; Wu Linxin

    Journal: JOURNAL OF INORGANIC MATERIALS. 2023; Vol. 38, Issue 4, pp. 469-+. DOI: 10.15541/jim20220591

  • Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics

    Author: Wang Jingyu; Wan Changjin; Wan Qing

    Journal: JOURNAL OF INORGANIC MATERIALS. 2023; Vol. 38, Issue 4, pp. 445-451. DOI: 10.15541/jim20220767

  • Intrinsically Stretchable Threshold Switching Memristor for Artificial Neuron Implementations

    Author: Tian Yu; Zhu Xiaojian; Sun Cui; Ye Xiaoyu; Liu Huiyuan; Li Runwei

    Journal: JOURNAL OF INORGANIC MATERIALS. 2023; Vol. 38, Issue 4, pp. 413-420. DOI: 10.15541/jim20220712

  • Effect of Plasma Treatment on the Long-term Plasticity of Synaptic Transistor

    Author: Qiu Haiyang; Miao Guangtan; Li Hui; Luan Qi; Liu Guoxia; Shan Fukai

    Journal: JOURNAL OF INORGANIC MATERIALS. 2023; Vol. 38, Issue 4, pp. 406-412. DOI: 10.15541/jim20220675