Journal Of Computational Electronics

Journal Of Computational Electronics

计算电子学杂志

  • 4区 中科院分区
  • Q3 JCR分区

期刊简介

《Journal Of Computational Electronics》是由Springer US出版社于2002年创办的英文国际期刊(ISSN: 1569-8025,E-ISSN: 1572-8137),该期刊长期致力于工程:电子与电气领域的创新研究,主要研究方向为ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED。作为SCIE收录期刊(JCR分区 Q3,中科院 4区),本刊采用OA未开放获取模式(OA占比0.025%),以发表工程:电子与电气领域等方向的原创性研究为核心(研究类文章占比100.00%%)。凭借严格的同行评审与高效编辑流程,期刊年载文量精选控制在117篇,确保学术质量与前沿性。成果覆盖Web of Science、Scopus等国际权威数据库,为学者提供推动工程技术领域高水平交流平台。

投稿咨询

投稿提示

Journal Of Computational Electronics审稿周期约为 12周,或约稿 。该刊近年未被列入国际预警名单,年发文量约117篇,录用竞争适中,主题需确保紧密契合工程技术前沿。投稿策略提示:避开学术会议旺季投稿以缩短周期,语言建议专业润色提升可读性。

  • 工程技术 大类学科
  • English 出版语言
  • 是否预警
  • SCIE 期刊收录
  • 117 发文量

中科院分区

中科院 SCI 期刊分区 2023年12月升级版

Top期刊 综述期刊 大类学科 小类学科
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用
4区 4区

中科院 SCI 期刊分区 2022年12月升级版

Top期刊 综述期刊 大类学科 小类学科
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用
4区 4区

JCR分区

按JIF指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 183 / 352

48.2%

学科:PHYSICS, APPLIED SCIE Q3 104 / 179

42.2%

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 190 / 354

46.47%

学科:PHYSICS, APPLIED SCIE Q3 100 / 179

44.41%

CiteScore

CiteScore SJR SNIP CiteScore 排名
CiteScore:4.5 SJR:0.294 SNIP:0.824
学科类别 分区 排名 百分位
大类:Mathematics 小类:Modeling and Simulation Q2 89 / 324

72%

大类:Mathematics 小类:Electrical and Electronic Engineering Q2 295 / 797

63%

大类:Mathematics 小类:Atomic and Molecular Physics, and Optics Q2 91 / 224

59%

大类:Mathematics 小类:Electronic, Optical and Magnetic Materials Q2 121 / 284

57%

期刊发文

  • Exploring the electrical performance of advanced and environmental-friendly novel nanomaterial wires in generator winding through finite element analysis

    Author: Hassan, Atazaz; Chen Quanfang; Abbas, Sajid; Akbar, Hussain; Luo Youming; Liu Jie

    Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 17-28. DOI: 10.1007/s10825-022-01965-y

  • Ab-initio characterization of iron-embedded nitrogen-doped graphene as a toxic gas sensor

    Author: Nosheen, Uzma; Jalil, Abdul; Ilyas, Syed Zafar; Ahmed, Sarfraz; Illahi, Ahsan; Rafiq, Muhammad Aftab

    Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 116-127. DOI: 10.1007/s10825-022-01977-8

  • Efficient modeling approach for simulating multi-physics responses of an ion-sensitive field-effect transistor using artificial neural networks

    Author: Xie, Jianan; Zhou, Yuanguo; Liang, Bingyang; Ren, Qiang; Javaid, Fawad

    Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 242-249. DOI: 10.1007/s10825-022-01979-6

  • Critical parameters of gate control in NC-FinFET on GaAs

    Author: Li, Henghui; Jia, Tingting; Zhang, Chong; Yu, Ziwei; Guo, Quansheng; Zhao, Hongyang; Jia, Chunyang; Yu, Shuhui; Sun, Rong

    Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 1, pp. 164-177. DOI: 10.1007/s10825-022-01957-y

  • Velocity-field characteristics of MgxZn1-xO/ZnO heterostructures

    Author: Liu, DongFeng

    Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 2, pp. 603-611. DOI: 10.1007/s10825-022-01999-2

  • Storm surge level prediction based on improved NARX neural network

    Author: Li, Lianbo; Wu, Wenhao; Zhang, Wenjun; Zhu, Zhenyu; Li, Zhengqian; Wang, Yihan; Niu, Sen

    Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 2, pp. 783-804. DOI: 10.1007/s10825-023-02005-z

  • Ultrahigh FOM and multiple Fano resonances in MIM waveguide systems with half-ring and rectangular cavities

    Author: Wang, Yunyan; Huo, Yiping; Cui, Pengfei; Song, Meina; Zhao, Chen; Liao, Zuxiong; Liu, Tong; Zhang, Zhongyue; Xie, You

    Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. 22, Issue 3, pp. 839-848. DOI: 10.1007/s10825-023-02022-y

  • Nonlocalization of singular potentials in quantum dynamics

    Author: Shao, Sihong; Su, Lili

    Journal: JOURNAL OF COMPUTATIONAL ELECTRONICS. 2023; Vol. , Issue , pp. -. DOI: 10.1007/s10825-023-02042-8