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Electromechanical and photoelectric properties of a novel semiconducting Janus InGaSSe monolayer
Author: Zhong, Li; Li, Xiaobao; Wang, Wei; Xiao, Xinle
Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/012701
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Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40 degrees-twisted bilayer WS2
Author: Zhao, Siwen; Shao, Gonglei; Han, Zheng Vitto; Liu, Song; Zhang, Tongyao
Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/012001
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The twisted two-dimensional ferroelectrics
Author: Zhang, Xinhao; Peng, Bo
Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011002
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Review of phonons in moire superlattices
Author: Li, Zhenyao; Lai, Jia-Min; Zhang, Jun
Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011902
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75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique
Author: Li, Xiuli; Zhu, Yupeng; Liu, Zhi; Peng, Linzhi; Liu, Xiangquan; Niu, Chaoqun; Zheng, Jun; Zuo, Yuhua; Cheng, Buwen
Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/012301
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Interface engineering in two-dimensional heterostructures towards novel emitters
Author: Li, Hua; Ling, Jinyang; Lin, Jiamin; Lu, Xin; Xu, Weigao
Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011001
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Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moire superlattices
Author: Huang, Xinyu; Han, Xu; Dai, Yunyun; Xu, Xiaolong; Yan, Jiahao; Huang, Mengting; Ding, Pengfei; Zhang, Decheng; Chen, Hui; Laxmi, Vijay; Wu, Xu; Liu, Liwei; Wang, Yeliang; Xu, Yang; Huang, Yuan
Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011901
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Interaction of moire excitons with cavity photons in two-dimensional semiconductor hetero-bilayers
Author: Gao, Yuchen; Ye, Yu
Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011903
