发文分析
近年国家/地区发文量统计
| 国家/地区 | 数量 |
|---|---|
| USA | 331 |
| CHINA MAINLAND | 200 |
| France | 185 |
| Italy | 105 |
| Switzerland | 95 |
| Japan | 78 |
| GERMANY (FED REP GER) | 53 |
| South Korea | 44 |
| England | 41 |
| Russia | 37 |
近年机构发文量统计
| 机构 | 数量 |
|---|---|
| UNITED STATES DEPARTMENT OF ENERGY (DOE) | 105 |
| CHINESE ACADEMY OF SCIENCES | 100 |
| VANDERBILT UNIVERSITY | 93 |
| CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (... | 80 |
| EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH (CE... | 76 |
| CEA | 73 |
| ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN) | 58 |
| UNIVERSITE DE TOULOUSE | 34 |
| UNIVERSITE DE MONTPELLIER | 31 |
| UNITED STATES DEPARTMENT OF DEFENSE | 29 |
近年文章引用他刊数据
| 文章名称 | 引用次数 |
|---|---|
| Needs, Trends, and Advances in Inorganic Scintillators | 53 |
| Evolution of Total Ionizing Dose Effects in MOS Devices ... | 15 |
| Contribution of Thermal Neutrons to Soft Error Rate | 12 |
| Displacement Damage in Silicon Detectors for High Energy... | 11 |
| Improvement of the Time Resolution of Radiation Detector... | 11 |
| Influence of LDD Spacers and H+ Transport on the Total-I... | 9 |
| LHC and HL-LHC: Present and Future Radiation Environment... | 9 |
| Thin Silicon Microdosimeter Utilizing 3-D MEMS Fabricati... | 9 |
| Luminescence and Scintillation Properties of Novel Disod... | 9 |
| Single-Event Burnout Mechanisms in SiC Power MOSFETs | 8 |
近年被他刊引用数据
| 期刊名称 | 引用次数 |
|---|---|
| IEEE T NUCL SCI | 1985 |
| NUCL INSTRUM METH A | 1041 |
| PHYS MED BIOL | 365 |
| MICROELECTRON RELIAB | 360 |
| J INSTRUM | 341 |
| IEEE T ELECTRON DEV | 192 |
| PROG NUCL ENERG | 188 |
| ELECTRONICS-SWITZ | 168 |
| IEEE ACCESS | 160 |
| SENSORS-BASEL | 159 |