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Cost-effective fabrication of K0.5Na0.5NbO3-based single crystals with superior piezoelectric and dielectric stability via simple seed-free solid-state crystal growth and doping technologie
Author: Di, Yiming; Wei, Wenqi; Chen, Zerong; Jiang, Minhong
Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110652
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From deposition kinetics to electrochromics: Phase-field simulation unveils the superiority of amorphous MoO3-x microstructure
Author: Lin, Yu; Liu, Zhe; Cheng, Ao; Wang, Cheng; Zhan, Runze; Tang, Shuai; Chen, Huanjun; Liu, Fei; She, Juncong; Chen, Jun; Shen, Yan; Deng, Shaozhi
Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110661
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GeS2-photogated WSe2 ambipolar photodetectors with fast response for self-powered operatio
Author: Wang, Ningning; Wang, Xinying; Mi, Jiao; Yang, Liyun; Huang, Hailin; Su, Ran; Wang, Baozhu; Zhou, Xinrong; Li, Shuai; Wang, Siyu; Xu, Guoliang; An, Xingtao
Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110659
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Study on the influence of material properties on thermal stress in tapered TSV
Author: Song, Jinhao; Ma, Dandan; Xia, Guodong; Ren, Pengyan; Chen, Yongchang
Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110663
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HF-based metal-assisted chemical etching for high-aspect-ratio silicon micro/nanostructures: Mechanisms, parameter mapping, and manufacturing consideration
Author: Yu, Daojiang; Zhang, Chongteng; Shen, Youkang; Li, Liyi
Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110646
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Combined effects of BET and PF on the mechanism and material removal in alkaline chemical mechanical polishing of In
Author: Zhang, Qingzhu; Sun, Ming; Zheng, Wenwen; Zheng, Jun; Hu, Yuewei
Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110666
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Analysis of hydrogen-terminated diamond FET with ohmic contacts formed via high-temperature hydrogen plasma treatmen
Author: Liu, Zhangcheng; Tang, Zhengjie; Li, Yang; Chen, Genqiang; Wang, Xiao; Ao, Jinping
Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110676
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Experimental study on electro-Fenton chemical mechanical polishing of polycrystalline diamon
Author: Chen, Xin; Zhang, Taosheng; Pan, Jisheng; Li, Shijie; Li, Zhaopei; Yang, Zhikang
Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2026; Vol. 210, Issue , pp. -. DOI: 10.1016/j.mssp.2026.110683
