Microelectronics Journal

Microelectronics Journal

微电子杂志

  • 3区 中科院分区
  • Q3 JCR分区

期刊简介

《Microelectronics Journal》是由Elsevier出版社于1967年创办的英文国际期刊(ISSN: 0026-2692,E-ISSN: 1879-2391),该期刊长期致力于工程:电子与电气领域的创新研究,主要研究方向为工程技术-工程:电子与电气。作为SCIE收录期刊(JCR分区 Q3,中科院 3区),本刊采用OA未开放获取模式(OA占比0.0096...%),以发表工程:电子与电气领域等方向的原创性研究为核心(研究类文章占比99.32%%)。凭借严格的同行评审与高效编辑流程,期刊年载文量精选控制在293篇,确保学术质量与前沿性。成果覆盖Web of Science、Scopus等国际权威数据库,为学者提供推动工程技术领域高水平交流平台。

投稿咨询

投稿提示

Microelectronics Journal审稿周期约为 约3.0个月 。该刊近年未被列入国际预警名单,年发文量约293篇,录用竞争适中,主题需确保紧密契合工程技术前沿。投稿策略提示:避开学术会议旺季投稿以缩短周期,语言建议专业润色提升可读性。

  • 工程技术 大类学科
  • English 出版语言
  • 是否预警
  • SCIE 期刊收录
  • 293 发文量

中科院分区

中科院 SCI 期刊分区 2023年12月升级版

Top期刊 综述期刊 大类学科 小类学科
工程技术
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技
3区 4区

中科院 SCI 期刊分区 2022年12月升级版

Top期刊 综述期刊 大类学科 小类学科
工程技术
3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技
3区 4区

JCR分区

按JIF指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 211 / 352

40.2%

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q4 110 / 140

21.8%

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 238 / 354

32.91%

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q3 94 / 140

33.21%

CiteScore

CiteScore SJR SNIP CiteScore 排名
CiteScore:4 SJR:0.39 SNIP:0.854
学科类别 分区 排名 百分位
大类:Physics and Astronomy 小类:Condensed Matter Physics Q2 181 / 434

58%

大类:Physics and Astronomy 小类:Electrical and Electronic Engineering Q2 332 / 797

58%

大类:Physics and Astronomy 小类:Atomic and Molecular Physics, and Optics Q2 101 / 224

55%

大类:Physics and Astronomy 小类:Surfaces, Coatings and Films Q2 61 / 132

54%

大类:Physics and Astronomy 小类:Electronic, Optical and Magnetic Materials Q2 133 / 284

53%

期刊发文

  • 16-Cell stackable battery monitoring and management integrated circuit for electric vehicles

    Author: Zhu, Guangqian; Qian, Libo; Li, Yongyuan; Guo, Wei; Ding, Ruixue; Yang, Yintang

    Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 136, Issue , pp. -. DOI: 10.1016/j.mejo.2023.105782

  • A wafer-level three-step calibration technique for BJT-based CMOS temperature sensor

    Author: Gao, Ying; Liu, Xin; Jiang, Yanfeng

    Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105671

  • Scalable modeling of grounded coplanar waveguide for MMICs design using neural network with an effective sampling strategy

    Author: Hu, Yanghui; Zhang, Yuming; Lu, Hongliang; Tan, Daidao; Qi, Junjun

    Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105670

  • A configurable area-efficient LCoS chip design with centrosymmetric pixel array

    Author: Zhao, Tianhu; Liang, Yuhua; Feng, Lichen

    Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105652

  • On-chip SRR and CSRR for millimeter-wave integrated systems: Review and applications

    Author: Yang, Ke; Liang, Yuan; Zhang, Hao Chi; Feng, Guangyin

    Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105664

  • A 10-MHz 85.1-dB SFDR 1.1-mW continuous-time Delta-sigma modulator employing calibration-free SC DAC and passive front-end low-pass filter

    Author: Jin, Wei; Pun, Kong-Pang

    Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105666

  • CMOS variable-gain phase shifter based on time-varying vector-sum method and its application to Ku-band phased array

    Author: Cheng, Guoxiao; Zhang, Jin-Dong; Chen, Qiaoyu; Sima, Boyu; Wu, Wen

    Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105672

  • A novel-16-60 V input common-mode voltage current-shunt monitor?

    Author: Duan, Quanzhen; Duan, Ying; Kong, Dameng; Li, Liwei; Huang, Shengming

    Journal: MICROELECTRONICS JOURNAL. 2023; Vol. 131, Issue , pp. -. DOI: 10.1016/j.mejo.2022.105663