Microelectronic Engineering

Microelectronic Engineering

微电子工程

  • 4区 中科院分区
  • Q2 JCR分区

期刊简介

《Microelectronic Engineering》是由Elsevier出版社于1983年创办的英文国际期刊(ISSN: 0167-9317,E-ISSN: 1873-5568),该期刊长期致力于工程:电子与电气领域的创新研究,主要研究方向为工程技术-工程:电子与电气。作为SCIE收录期刊(JCR分区 Q2,中科院 4区),本刊采用OA未开放获取模式(OA占比0.1274...%),以发表工程:电子与电气领域等方向的原创性研究为核心(研究类文章占比91.00%%)。凭借严格的同行评审与高效编辑流程,期刊年载文量精选控制在100篇,确保学术质量与前沿性。成果覆盖Web of Science、Scopus等国际权威数据库,为学者提供推动工程技术领域高水平交流平台。

投稿咨询

投稿提示

Microelectronic Engineering审稿周期约为 约6.0个月 。该刊近年未被列入国际预警名单,年发文量约100篇,录用竞争适中,主题需确保紧密契合工程技术前沿。投稿策略提示:避开学术会议旺季投稿以缩短周期,语言建议专业润色提升可读性。

  • 工程技术 大类学科
  • English 出版语言
  • 是否预警
  • SCIE 期刊收录
  • 100 发文量

中科院分区

中科院 SCI 期刊分区 2023年12月升级版

Top期刊 综述期刊 大类学科 小类学科
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 OPTICS 光学 PHYSICS, APPLIED 物理:应用
4区 4区 4区 4区

中科院 SCI 期刊分区 2022年12月升级版

Top期刊 综述期刊 大类学科 小类学科
工程技术
3区
OPTICS 光学 PHYSICS, APPLIED 物理:应用 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技
3区 3区 4区 4区

JCR分区

按JIF指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q2 157 / 352

55.5%

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q3 94 / 140

33.2%

学科:OPTICS SCIE Q2 45 / 119

62.6%

学科:PHYSICS, APPLIED SCIE Q2 81 / 179

55%

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 179 / 354

49.58%

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q3 74 / 140

47.5%

学科:OPTICS SCIE Q3 64 / 120

47.08%

学科:PHYSICS, APPLIED SCIE Q2 88 / 179

51.12%

CiteScore

CiteScore SJR SNIP CiteScore 排名
CiteScore:5.3 SJR:0.503 SNIP:0.847
学科类别 分区 排名 百分位
大类:Physics and Astronomy 小类:Condensed Matter Physics Q2 127 / 434

70%

大类:Physics and Astronomy 小类:Atomic and Molecular Physics, and Optics Q2 68 / 224

69%

大类:Physics and Astronomy 小类:Electrical and Electronic Engineering Q2 242 / 797

69%

大类:Physics and Astronomy 小类:Electronic, Optical and Magnetic Materials Q2 87 / 284

69%

大类:Physics and Astronomy 小类:Surfaces, Coatings and Films Q2 42 / 132

68%

期刊发文

  • Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures

    Author: Luan, Tiantian; Jiang, Qimeng; Huang, Sen; Wang, Xinhua; Jin, Hao; Guo, Fuqiang; Yao, Yixu; Fan, Jie; Yin, Haibo; Wei, Ke; Li, Yankui; Jiang, Haojie; Li, Junfeng; Liu, Xinyu

    Journal: MICROELECTRONIC ENGINEERING. 2023; Vol. 269, Issue , pp. -. DOI: 10.1016/j.mee.2022.111916

  • Soybean-based memristor for multilevel data storage and emulation of synaptic behavior

    Author: Wang, Lu; Li, Wenhao; Wen, Dianzhong

    Journal: MICROELECTRONIC ENGINEERING. 2023; Vol. 267, Issue , pp. -. DOI: 10.1016/j.mee.2022.111911

  • La-doped BiFeO3 junction based random access multilevel nonvolatile memory

    Author: Li, Dong; Zhu, Xiaodong; Wu, Yanan; Zhao, Jian; Zhang, Kaimin; Li, Rui; Hao, Danni; Ma, Yanqing; Moro, Ramiro; Ma, Lei

    Journal: MICROELECTRONIC ENGINEERING. 2023; Vol. 267, Issue , pp. -. DOI: 10.1016/j.mee.2022.111908

  • A dual-mass fully decoupled MEMS gyroscope with optimized structural design for minimizing mechanical quadrature coupling

    Author: Wu, Zhongye; Feng, Ronghui; Sun, Chengliang; Wang, Peng; Wu, Guoqiang

    Journal: MICROELECTRONIC ENGINEERING. 2023; Vol. 269, Issue , pp. -. DOI: 10.1016/j.mee.2022.111918

  • Dynamical analysis, circuit implementation, and simultaneous application of a novel four-dimensional hyperchaotic system based on cosine functions

    Author: Zhang, Jie; Hou, Jinyou; Xu, Longhao; Zhu, Xiaopeng; Xie, Qinggang

    Journal: MICROELECTRONIC ENGINEERING. 2023; Vol. 271, Issue , pp. -. DOI: 10.1016/j.mee.2023.111939

  • Machine learning algorithm for the structural design of MEMS resonators

    Author: Gu, Liutao; Zhang, Weiping; Lu, Haolin; Wu, Yuting; Fan, Chongyang

    Journal: MICROELECTRONIC ENGINEERING. 2023; Vol. 271, Issue , pp. -. DOI: 10.1016/j.mee.2023.111950

  • The insight and evaluation of ultra-scaled sub-1 nm gate length transistors

    Author: Tian, He; Shen, Yang; Yan, Zhaoyi; Liu, Yanming; Wu, Fan; Ren, Tian-Ling

    Journal: MICROELECTRONIC ENGINEERING. 2023; Vol. 273, Issue , pp. -. DOI: 10.1016/j.mee.2023.111963

  • Simulation study of zone-height limit by electron beam lithography for 30 nm Fresnel zone plates in X ray optics

    Author: Chen, Qiucheng; Mu, Chengyang; Tong, Xujie; Zhao, Jun; Wu, Qingxin; Chen, Yifang

    Journal: MICROELECTRONIC ENGINEERING. 2023; Vol. 273, Issue , pp. -. DOI: 10.1016/j.mee.2023.111965