| Lightweight flexible indium-free oxide TFTs with AND logic function employing chitosan biopolymer as self-supporting layer |
21 |
| The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes |
12 |
| Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless MOSFET |
11 |
| Low-voltage electric-double-layer MoS2 transistor gated via water solution |
11 |
| Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination |
11 |
| Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures |
10 |
| Improve the performance of CZTSSe solar cells by applying a SnS BSF layer |
10 |
| A review on terahertz photogalvanic spectroscopy of Bi2Te3- and Sb2Te3-based three dimensional topological insulators |
8 |
| Multi-layer WSe2 field effect transistor with improved carrier-injection contact by using oxygen plasma treatment |
8 |
| SnO2 nanoparticles/TiO2 nanofibers heterostructures: In situ fabrication and enhanced gas sensing performance |
7 |
| Palladium (Pd) sensitized molybdenum trioxide (MoO3) nanobelts for nitrogen dioxide (NO2) gas detection |
7 |
| Degradation and failure mechanism of AlGaN-based UVC-LEDs |
7 |
| Digital and analog TFET circuits: Design and benchmark |
7 |
| Resistive switching characteristics of solution-processed organic-inorganic blended films for flexible memory applications |
7 |
| Wide band gap semiconductor technology: State-of-the-art |
7 |
| Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 degrees C |
6 |
| Integrated on-chip solid state capacitor based on vertically aligned carbon nanofibers, grown using a CMOS temperature compatible process |
6 |
| Tunable-Sensitivity flexible pressure sensor based on graphene transparent electrode |
6 |
| Graphene/black phosphorus heterostructured photodetector |
6 |
| Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents |
6 |
| Design and fabrication of very small MEMS microphone with silicon diaphragm supported by Z-shape arms using SOI wafer |
5 |
| Improved efficiency of organic light emitting devices using graphene oxide with optimized thickness as hole injection layer |
5 |
| Effect of MgO doping on the BiVO4 sensing electrode performance for YSZ-based potentiometric ammonia sensor |
5 |
| Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT |
5 |
| Low voltage operation of GaN vertical nanowire MOSFET |
5 |
| Effect of traps on the charge transport in semiconducting polymer PCDTBT |
5 |
| A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model |
5 |
| Carbon nanotube Schottky type photodetectors for UV applications |
5 |
| Analog neuromorphic computing using programmable resistor arrays |
5 |
| Sensing properties of separative paper-based extended-gate ion-sensitive field-effect transistor for cost effective pH sensor applications |
4 |
| Improvement of sensing margin and reset switching fail of RRAM |
4 |
| Enhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method |
4 |
| Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions |
4 |
| High-periphery GaN HEMT modeling up to 65 GHz and 200 degrees C |
4 |
| Ionic conduction and unipolar resistance switching in delta-phase Bi2O3 thin films |
4 |
| Effect of degree of strain relaxation on polarization charges of GaN/InGaN/GaN hexagonal and triangular nanowire solar cells |
4 |
| Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation |
4 |
| Impact of threshold voltage extraction methods on semiconductor device variability |
4 |
| Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte |
4 |
| Light-controlled resistive switching characteristics in ZnO/BiFeO3/ZnO thin film |
4 |
| The prospects of transition metal dichalcogenides for ultimately scaled CMOS |
4 |
| Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures |
4 |
| Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene |
4 |
| Gradual switching and self-rectifying characteristics of Cu/alpha-IGZO/p(+)-Si RRAM for synaptic device application |
4 |
| An innovative large scale integration of silicon nanowire-based field effect transistors |
4 |
| Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures |
4 |
| Al2O3 thin film multilayer structure for application in RRAM devices |
4 |
| Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT |
4 |
| Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface |
3 |
| A compact model and TCAD simulation for GaN-gate injection transistor (GIT) |
3 |
