Solid-state Electronics

Solid-state Electronics

固态电子

  • 4区 中科院分区
  • Q3 JCR分区

期刊简介

《Solid-state Electronics》是由Elsevier Ltd出版社于1960年创办的英文国际期刊(ISSN: 0038-1101,E-ISSN: 1879-2405),该期刊长期致力于工程:电子与电气领域的创新研究,主要研究方向为物理-工程:电子与电气。作为SCIE收录期刊(JCR分区 Q3,中科院 4区),本刊采用OA未开放获取模式(OA占比0.0126...%),以发表工程:电子与电气领域等方向的原创性研究为核心(研究类文章占比99.43%%)。凭借严格的同行评审与高效编辑流程,期刊年载文量精选控制在175篇,确保学术质量与前沿性。成果覆盖Web of Science、Scopus等国际权威数据库,为学者提供推动物理与天体物理领域高水平交流平台。

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投稿提示

Solid-state Electronics审稿周期约为 一般,3-6周 约9.2周。该刊近年未被列入国际预警名单,年发文量约175篇,录用竞争适中,主题需确保紧密契合物理与天体物理前沿。投稿策略提示:避开学术会议旺季投稿以缩短周期,语言建议专业润色提升可读性。

  • 物理与天体物理 大类学科
  • English 出版语言
  • 是否预警
  • SCIE 期刊收录
  • 175 发文量

中科院分区

中科院 SCI 期刊分区 2023年12月升级版

Top期刊 综述期刊 大类学科 小类学科
物理与天体物理
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用 PHYSICS, CONDENSED MATTER 物理:凝聚态物理
4区 4区 4区

中科院 SCI 期刊分区 2022年12月升级版

Top期刊 综述期刊 大类学科 小类学科
物理与天体物理
3区
PHYSICS, CONDENSED MATTER 物理:凝聚态物理 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 PHYSICS, APPLIED 物理:应用
3区 4区 4区

JCR分区

按JIF指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 259 / 352

26.6%

学科:PHYSICS, APPLIED SCIE Q4 138 / 179

23.2%

学科:PHYSICS, CONDENSED MATTER SCIE Q4 61 / 79

23.4%

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONIC SCIE Q3 261 / 354

26.41%

学科:PHYSICS, APPLIED SCIE Q3 133 / 179

25.98%

学科:PHYSICS, CONDENSED MATTER SCIE Q3 54 / 79

32.28%

CiteScore

CiteScore SJR SNIP CiteScore 排名
CiteScore:3 SJR:0.348 SNIP:0.655
学科类别 分区 排名 百分位
大类:Engineering 小类:Electrical and Electronic Engineering Q3 419 / 797

47%

大类:Engineering 小类:Condensed Matter Physics Q3 245 / 434

43%

大类:Engineering 小类:Materials Chemistry Q3 182 / 317

42%

大类:Engineering 小类:Electronic, Optical and Magnetic Materials Q3 169 / 284

40%

期刊发文

  • Monolithic TCAD simulation of phase-change memory (PCM/PRAM) plus Ovonic Threshold Switch (OTS) selector device

    Author: Thesberg, M.; Stanojevic, Z.; Baumgartner, O.; Kernstock, C.; Leonelli, D.; Barci, M.; Wang, X.; Zhou, X.; Jiao, H.; Donadio, G. L.; Garbin, D.; Witters, T.; Kundu, S.; Hody, H.; Delhougne, R.; Kar, G.; Karner, M.

    Journal: SOLID-STATE ELECTRONICS. 2023; Vol. 199, Issue , pp. -. DOI: 10.1016/j.sse.2022.108504

  • New insights into the effect of spatially distributed polarization in ferroelectric FET on content addressable memory operation for machine learning applications

    Author: Su, Chang; Xu, Weikai; Zhang, Lining; Huang, Ru; Huang, Qianqian

    Journal: SOLID-STATE ELECTRONICS. 2023; Vol. 199, Issue , pp. -. DOI: 10.1016/j.sse.2022.108495

  • Analysis of uniaxial stress impact on drift velocity of 4H-SiC by full-band Monte Carlo simulation

    Author: Nishimura, T.; Eikyu, K.; Sonoda, K.; Ogata, T.

    Journal: SOLID-STATE ELECTRONICS. 2023; Vol. 199, Issue , pp. -. DOI: 10.1016/j.sse.2022.108503

  • Investigation on holding voltage of asymmetric DDSCR with floating heavy doping in 0.18?m CMOS process

    Author: Guan, Wenjie; Wang, Yang; Deng, Zhiqin; Yu, Bo; Chen, Xijun; Jin, Xiangliang; Yang, Hongjiao

    Journal: SOLID-STATE ELECTRONICS. 2023; Vol. 199, Issue , pp. -. DOI: 10.1016/j.sse.2022.108486

  • On the feasibility of DoS-engineering for achieving sub-60 mV subthreshold slope in MOSFETs

    Author: Gonzalez-Medina, Jose Maria; Stanojevic, Zlatan; Hou, Zhaozhao; Zhang, Qiang; Li, Wei; Xu, Jeffrei; Karner, Markus

    Journal: SOLID-STATE ELECTRONICS. 2023; Vol. 199, Issue , pp. -. DOI: 10.1016/j.sse.2022.108494

  • Lumped-parameter equivalent circuit modeling of solar cells with S-shaped I-V characteristics

    Author: Fei Yu, Gongyi Huang, Wei Lin, Chuanzhong Xu, Wanling Deng, Xiaoyu Ma, Junkai Huang

    Journal: SOLID-STATE ELECTRONICS, 2019, Vol., , DOI:10.1016/j.sse.2019.03.029

  • Improved performance of fully-recessed normally-off LPCVD SiN/GaN MISFET using N2O plasma pretreatment

    Author: Mengjun Li, Jinyan Wang, Hongyue Wang, Qirui Cao, Jingqian Liu, Chengyu Huang

    Journal: SOLID-STATE ELECTRONICS, 2019, Vol., , DOI:10.1016/j.sse.2019.03.067

  • SnO2 nanoparticles/TiO2 nanofibers heterostructures: in situ fabrication and enhanced gas sensing performance

    Author: Kunquan Chen, Shijian Chen, Mingyu Pi, Dingke Zhang

    Journal: SOLID-STATE ELECTRONICS, 2019, Vol., , DOI:10.1016/j.sse.2019.03.024