Silicon

Silicon

  • 3区 中科院分区
  • Q3 JCR分区

期刊简介

《Silicon》是由Springer Netherlands出版社于2009年创办的英文国际期刊(ISSN: 1876-990X,E-ISSN: 1876-9918),该期刊长期致力于物理化学领域的创新研究,主要研究方向为CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY。作为SCIE收录期刊(JCR分区 Q3,中科院 3区),本刊采用OA未开放获取模式(OA占比0.0139...%),以发表物理化学领域等方向的原创性研究为核心(研究类文章占比96.53%%)。凭借严格的同行评审与高效编辑流程,期刊年载文量精选控制在547篇,确保学术质量与前沿性。成果覆盖Web of Science、Scopus等国际权威数据库,为学者提供推动材料科学领域高水平交流平台。

投稿咨询

投稿提示

Silicon审稿周期约为 12周,或约稿 。该刊近年未被列入国际预警名单,年发文量约547篇,录用竞争适中,主题需确保紧密契合材料科学前沿。投稿策略提示:避开学术会议旺季投稿以缩短周期,语言建议专业润色提升可读性。

  • 材料科学 大类学科
  • English 出版语言
  • 是否预警
  • SCIE 期刊收录
  • 547 发文量

中科院分区

中科院 SCI 期刊分区 2023年12月升级版

Top期刊 综述期刊 大类学科 小类学科
材料科学
3区
CHEMISTRY, PHYSICAL 物理化学 MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合
3区 3区

中科院 SCI 期刊分区 2022年12月升级版

Top期刊 综述期刊 大类学科 小类学科
材料科学
3区
CHEMISTRY, PHYSICAL 物理化学 MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合
4区 4区

JCR分区

按JIF指标学科分区 收录子集 分区 排名 百分位
学科:CHEMISTRY, PHYSICAL SCIE Q3 103 / 178

42.4%

学科:MATERIALS SCIENCE, MULTIDISCIPLINARY SCIE Q3 229 / 438

47.8%

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:CHEMISTRY, PHYSICAL SCIE Q3 107 / 178

40.17%

学科:MATERIALS SCIENCE, MULTIDISCIPLINARY SCIE Q3 255 / 438

41.89%

CiteScore

CiteScore SJR SNIP CiteScore 排名
CiteScore:5.9 SJR:0.535 SNIP:1.061
学科类别 分区 排名 百分位
大类:Materials Science 小类:Electronic, Optical and Magnetic Materials Q2 81 / 284

71%

期刊发文

  • Mass Transfer Model of Oriented Silicon Steel Coil during the First Soaking in Annular Furnace

    Author: Xia, Tian; He, Zhu; Xiang, Zhidong; Shen, Xinyi; Li, Weijie

    Journal: SILICON. 2023; Vol. 15, Issue 1, pp. 269-284. DOI: 10.1007/s12633-022-01996-x

  • Carbon Nanotube (10,0) and Silicon Nanotube (7,0) as a Novel Material for Drug Delivery of Substituted Eugenols as Antioxidant Drugs

    Author: Hussein, Shaymaa Abed; Mohammed, Mohanad Adel; Mahdi, Marwah M.; Al Mashhadani, Zuhair, I; Abood, Emad Salaam; Zhao, Xiaoguang

    Journal: SILICON. 2023; Vol. 15, Issue 1, pp. 285-291. DOI: 10.1007/s12633-022-02026-6

  • The Effect of Temperature on Silicon Nucleation from Melt in Seed-assisted Growth - a Molecular Dynamics Study

    Author: Xia, Manyu; Liu, Shilong; Liu, Shuhui; Wu, Jiahui; Gan, Xianglai; Zhou, Naigen

    Journal: SILICON. 2023; Vol. 15, Issue 1, pp. 405-415. DOI: 10.1007/s12633-022-02024-8

  • Study of Xonotlite Whisker Used to Inhibit the High-Temperature Strength Decline of Cementing Cement Stone

    Author: Peng, Zhigang; Chen, Jinxu; Feng, Qian; Zheng, Yong; Zhang, Bojian

    Journal: SILICON. 2023; Vol. 15, Issue 1, pp. 425-436. DOI: 10.1007/s12633-022-02032-8

  • Study of Factors Affecting the Color Fastness of High Depth fiber Dyed in Silicon Non-aqueous Medium Dyeing System

    Author: Luo, Yuni; Cheng, Wenqing; Chen, Wenmiao; Pei, Liujun; Saleem, Muhammad Asad; Cai, Zaisheng; Wang, Jiping

    Journal: SILICON. 2023; Vol. 15, Issue 1, pp. 459-469. DOI: 10.1007/s12633-022-01753-0

  • Effects of Temperature and Si3N4 Diluent on Nitriding of Diamond Wire Silicon Cutting Waste

    Author: Wang, Lijuan; Zhuang, Yanxin; Xing, Pengfei

    Journal: SILICON. 2023; Vol. 15, Issue 1, pp. 521-531. DOI: 10.1007/s12633-022-02005-x

  • Purification of Quartz Via Low-Temperature Microwave Chlorinated Calcination Combined with Acid Leaching and its Mechanism

    Author: Song, Wangfeng; Jiang, Xuesong; Chen, Chen; Ban, Boyuan; Wan, Songming; Chen, Jian

    Journal: SILICON. 2023; Vol. 15, Issue 2, pp. 971-981. DOI: 10.1007/s12633-022-01749-w

  • Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

    Author: Li, Tai; Zhao, Liang; Lv, Guoqiang; Ma, Wenhui; Zhang, Mengyu; Huang, Zhenling

    Journal: SILICON. 2023; Vol. 15, Issue 2, pp. 1049-1062. DOI: 10.1007/s12633-022-02059-x