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Phase-Transition-Controlled Modulation of Spin-Orbit Torques in VO2-Based Heterostructures by Orbital Hall Effec
Author: Liu, Ye; Wu, Yong; Xie, Xiaoqian; Zhang, Jie; Li, Ang; Meng, Kangkang; Zhang, Delin; Chen, Jikun; Xu, Xiaoguang; Jiang, Yong
Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. 12, Issue 8, pp. -. DOI: 10.1002/aelm.70382
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Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integratio
Author: Song, Xujin; Yu, Chenxi; Li, Shangze; Sun, Dijiang; Zhang, Jiajia; Zhu, Haotong; Xiao, Xiaomin; Qin, Xionghao; Liu, Xiaoyan; Zhang, Xing; Kang, Jinfeng
Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202500774
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Array-Level Characterization of Cryogenic RRA
Author: Lu, Yuyao; Hu, Ruofei; Jiang, Zhixing; Xu, Feng; Gao, Bin; Tang, Jianshi; Qian, He; Wu, Huaqiang
Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202500878
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Low-Temperature Annealed Cu/Al Bilayer Architecture for Highly Stable Flexible Metal-Mesh Transparent Electrode
Author: Shu, Yourong; Liu, Ruiyao; Wu, Peng; Di, Yongjiang; He, Huichao; Yang, Qian; Wang, Wenrong; Jiang, Hanmei; Han, Tao; Meng, Lijian; Ruan, Haibo; Tang, Sheng
Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202600007
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Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantatio
Author: Chen, Shaochuan; Valov, Ilia
Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202600002
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Oxygen Vacancies Driven Photoconductivity in Layered Cobaltite Epitaxial Film
Author: Chen, Yanbin; Liu, Yiqun; Xu, Xing; Ma, Jing; Nan, Ce-wen; Chen, Chonglin
Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202500566
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CsPbBr3-Nanodiamonds Hybrid Wafers for Mechanically Robust, High-Performance X-Ray Detectio
Author: Gong, Yanan; Xu, Zhuangjie; Zhu, Weidong; Zhang, Xiaoxuan; Wang, Zihao; Ren, Zeyang; Ba, Yanshuang; Xi, He; Li, Zhimin; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue
Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.70406
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Ultra-Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detectio
Author: Li, Tengyu; Wang, Yongrui; Zhang, Weifeng; Xu, Jikang; Yan, Xiaobing
Journal: ADVANCED ELECTRONIC MATERIALS. 2026; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202500819
