Advanced Electronic Materials

Advanced Electronic Materials

先进电子材料

  • 2区 中科院分区
  • Q1 JCR分区

期刊简介

《Advanced Electronic Materials》是由Wiley-VCH Verlag出版社于2015年创办的英文国际期刊(ISSN: 2199-160X,E-ISSN: 2199-160X),该期刊长期致力于物理:应用领域的创新研究,主要研究方向为NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY。作为SCIE收录期刊(JCR分区 Q1,中科院 2区),本刊采用OA未开放获取模式(OA占比0.0666...%),以发表物理:应用领域等方向的原创性研究为核心(研究类文章占比94.34%%)。凭借严格的同行评审与高效编辑流程,期刊年载文量精选控制在389篇,确保学术质量与前沿性。成果覆盖Web of Science、Scopus等国际权威数据库,为学者提供推动材料科学领域高水平交流平台。

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投稿提示

Advanced Electronic Materials审稿周期约为 10 Weeks 。该刊近年未被列入国际预警名单,年发文量约389篇,录用竞争适中,主题需确保紧密契合材料科学前沿。投稿策略提示:避开学术会议旺季投稿以缩短周期,语言建议专业润色提升可读性。

  • 材料科学 大类学科
  • English 出版语言
  • 是否预警
  • SCIE 期刊收录
  • 389 发文量

中科院分区

中科院 SCI 期刊分区 2023年12月升级版

Top期刊 综述期刊 大类学科 小类学科
材料科学
2区
PHYSICS, APPLIED 物理:应用 MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合 NANOSCIENCE & NANOTECHNOLOGY 纳米科技
2区 3区 3区

中科院 SCI 期刊分区 2022年12月升级版

Top期刊 综述期刊 大类学科 小类学科
材料科学
2区
MATERIALS SCIENCE, MULTIDISCIPLINARY 材料科学:综合 PHYSICS, APPLIED 物理:应用 NANOSCIENCE & NANOTECHNOLOGY 纳米科技
2区 2区 3区

JCR分区

按JIF指标学科分区 收录子集 分区 排名 百分位
学科:MATERIALS SCIENCE, MULTIDISCIPLINARY SCIE Q2 122 / 438

72.3%

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q2 46 / 140

67.5%

学科:PHYSICS, APPLIED SCIE Q1 42 / 179

76.8%

按JCI指标学科分区 收录子集 分区 排名 百分位
学科:MATERIALS SCIENCE, MULTIDISCIPLINARY SCIE Q2 126 / 438

71.35%

学科:NANOSCIENCE & NANOTECHNOLOGY SCIE Q2 46 / 140

67.5%

学科:PHYSICS, APPLIED SCIE Q2 48 / 179

73.46%

CiteScore

CiteScore SJR SNIP CiteScore 排名
CiteScore:11 SJR:1.689 SNIP:1.154
学科类别 分区 排名 百分位
大类:Materials Science 小类:Electronic, Optical and Magnetic Materials Q1 36 / 284

87%

期刊发文

  • High-kappa and High-Temperature Dipolar Glass Polymers Based on Sulfonylated and Cyanolated Poly(Arylene Ether)s for Capacitive Energy Storage

    Author: Huang, Wen; Ju, Tianxiong; Li, Ruipeng; Duan, Yajun; Duan, Yanan; Wei, Junji; Zhu, Lei

    Journal: ADVANCED ELECTRONIC MATERIALS. 2023; Vol. 9, Issue 1, pp. -. DOI: 10.1002/aelm.202200414

  • Design Strategies for Strain-Insensitive Wearable Healthcare Sensors and Perspective Based on the Seebeck Coefficient

    Author: Xin, Yangyang; Zhou, Jian; Nesser, Hussein; Lubineau, Gilles

    Journal: ADVANCED ELECTRONIC MATERIALS. 2023; Vol. 9, Issue 1, pp. -. DOI: 10.1002/aelm.202200534

  • Novel Dielectric Nanogranular Materials with an Electrically Tunable Frequency Response

    Author: Cao, Yang; Kobayashi, Nobukiyo; Wang, Cheng; Takahashi, Saburo; Maekawa, Sadamichi; Masumoto, Hiroshi

    Journal: ADVANCED ELECTRONIC MATERIALS. 2023; Vol. , Issue , pp. -. DOI: 10.1002/aelm.202201218

  • Electrical Detection of Magnetic Skyrmions in a Magnetic Tunnel Junction

    Author: Guang, Yao; Zhang, Like; Zhang, Junwei; Wang, Yadong; Zhao, Yuelei; Tomasello, Riccardo; Zhang, Senfu; He, Bin; Li, Jiahui; Liu, Yizhou; Feng, Jiafeng; Wei, Hongxiang; Carpentieri, Mario; Hou, Zhipeng; Liu, Junming; Peng, Yong; Zeng, Zhongming; Finocchio, Giovanni; Zhang, Xixiang; Coey, John Michael David; Han, Xiufeng; Yu, Guoqiang

    Journal: ADVANCED ELECTRONIC MATERIALS. 2023; Vol. 9, Issue 1, pp. -. DOI: 10.1002/aelm.202200570

  • Electrically Tuning Interfacial Ion Redistribution for mica/WSe2 Memory Transistor

    Author: Yang, Zhihao; Wang, Dong; Wang, Shaoyuan; Tan, Chao; Yang, Lei; Wang, Zegao

    Journal: ADVANCED ELECTRONIC MATERIALS. 2023; Vol. 9, Issue 1, pp. -. DOI: 10.1002/aelm.202200679

  • Spatiotemporal Modulation of Plasticity in Multi-Terminal Tactile Synaptic Transistor

    Author: Mo, Wen-Ai; Ding, Guanglong; Nie, Zihao; Feng, Zihao; Zhou, Kui; Chen, Ruo-Si; Xie, Peng; Shang, Gang; Han, Su-Ting; Zhou, Ye

    Journal: ADVANCED ELECTRONIC MATERIALS. 2023; Vol. 9, Issue 1, pp. -. DOI: 10.1002/aelm.202200733

  • Large and Tunable Magnetoresistance in Cr1-xTe/Al2O3/Cr1-xTe Vertical Spin Valve Device

    Author: Gao, Zhansheng; Chen, Jiabiao; Zhang, Zheshan; Liu, Zhaochao; Zhang, Yu; Xu, Lingyun; Wu, Jinxiong; Luo, Feng

    Journal: ADVANCED ELECTRONIC MATERIALS. 2023; Vol. 9, Issue 1, pp. -. DOI: 10.1002/aelm.202200823

  • Synergistically Enhanced Performance and Reliability of Abrupt Metal-Oxide Heterojunction Transistor

    Author: Wang, Pengfei; Yang, Huan; Li, Jiye; Zhang, Xiaohui; Wang, Lei; Xiao, Juncheng; Zhao, Bin; Zhang, Shengdong; Lu, Lei

    Journal: ADVANCED ELECTRONIC MATERIALS. 2023; Vol. 9, Issue 1, pp. -. DOI: 10.1002/aelm.202200807