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Development of a Cesium Vapor MEMS Cell for Differential Measurement of Microwave Electromagnetically Induced Transparency
Author: Zhu, Jingtong; Zhao, Rui; Li, Zhonghao; Hao, Desheng; Zu, Kaixuan; Shi, Yunbo; Tang, Jun; Liu, Jun
Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 132-135. DOI: 10.1109/LED.2022.3219922
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Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes
Author: Zhang, Zhaohao; Zhang, Fan; Zhang, Yadong; Xu, Gaobo; Wu, Zhenhua; Zhang, Qingzhu; Li, Yongliang; Yin, Huaxiang; Luo, Jun; Wang, Wenwu; Ye, Tianchun
Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 64-67. DOI: 10.1109/LED.2022.3223335
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Photolithographic Patterning of Polypyrrole on Elastic Polydimethylsiloxane for Flexible and Conformal Organic Electronics
Author: Zhang, Tao; Wang, Xue; Tong, Yanhong; Sun, Jing; Zhao, Xiaoli; Liu, Xiaoqian; Han, Xu; Tang, Qingxin; Liu, Yichun
Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 76-79. DOI: 10.1109/LED.2022.3221521
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Investigation to the Carrier Transport Properties in Heterojunction-Channel Amorphous Oxides Thin-Film Transistors Using Dual-Gate Bias
Author: Yang, Huan; Zhou, Xiaoliang; Lu, Lei; Zhang, Shengdong
Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 68-71. DOI: 10.1109/LED.2022.3223080
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An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps
Author: Wu, Yanlin; Wei, Jin; Wang, Maojun; Nuo, Muqin; Yang, Junjie; Lin, Wei; Zheng, Zheyang; Zhang, Li; Hua, Mengyuan; Yang, Xuelin; Hao, Yilong; Chen, Kevin J.; Shen, Bo
Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 25-28. DOI: 10.1109/LED.2022.3222170
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Excitation/Inhibition Balancing in 2D Synaptic Transistors With Minority-Carrier Charge Dynamics
Author: Wu, Rongqi; Liu, Xiaochi; Wang, Zhongwang; Jing, Yumei; Yuan, Yahua; Tang, Kui; Dai, Xianfu; Qiu, Aocheng; Jaiswal, Hemendra N.; Sun, Jia; Li, Huamin; Sun, Jian
Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 156-159. DOI: 10.1109/LED.2022.3224471
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2.69 kV/2.11 m Omega center dot cm(2) and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage
Author: Wei, Xing; Shen, Wenchao; Zhou, Xin; Tang, Wenbo; Ma, Yongjian; Chen, Tiwei; Wang, Dawei; Fu, Houqiang; Zhang, Xiaodong; Lin, Wenkui; Yu, Guohao; Cai, Yong; Zhang, Baoshun
Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 13-16. DOI: 10.1109/LED.2022.3220600
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Low Temperature Cu-Cu Bonding Using an Intermediate Sacrificial Sn Layer
Author: Wang, Zilin; Shi, Yunfan; Wang, Zheyao
Journal: IEEE ELECTRON DEVICE LETTERS. 2023; Vol. 44, Issue 1, pp. 116-119. DOI: 10.1109/LED.2022.3221375
