| Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage > 1 kV |
38 |
| An Artificial Neuron Based on a Threshold Switching Memristor |
36 |
| Recessed-Gate Enhancement-Mode beta-Ga2O3 MOSFETs |
28 |
| Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque |
27 |
| Current Aperture Vertical beta-Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping |
27 |
| beta-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz |
26 |
| Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation |
24 |
| 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs |
24 |
| Vertical Ga(2)O(3 )Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga's Figure-of-Merit of 0.6 GW/cm(2) |
23 |
| First Demonstration of a Logic-Process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications |
22 |
| Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors |
22 |
| Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide |
22 |
| Improved Synapse Device With MLC and Conductance Linearity Using Quantized Conduction for Neuromorphic Systems |
20 |
| High-Density NAND-Like Spin Transfer Torque Memory With Spin Orbit Torque Erase Operation |
20 |
| Fully Vertical GaN-on-Si power MOSFETs |
19 |
| Proposal for Capacitance Matching in Negative Capacitance Field-Effect Transistors |
19 |
| High-Performance Metal-Organic Chemical Vapor Deposition Grown epsilon-Ga2O3 Solar-Blind Photodeterctor With Asymmetric Schottky Electrodes |
18 |
| Field-Plated Lateral beta-Ga2O3 Schottky Barrie Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm(2) |
18 |
| Lateral 1.8 kV beta-Ga2O3 MOSFET With 155 MW/cm(2) Power Figure of Merit |
18 |
| Flexible Organic Light-Emitting Diode Displays Driven by Inkjet-Printed High-Mobility Organic Thin-Film Transistors |
18 |
| Source-Field-Plated beta-Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm(2) |
18 |
| A High Frequency Hydrogen-Terminated Diamond MISFET With f(T)/f(max) of 70/80 GHz |
18 |
| Negative Differential Resistance in Negative Capacitance FETs |
17 |
| High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm |
16 |
| Superior Selectivity and Sensitivity of C3N Sensor in Probing Toxic Gases NO2 and SO2 |
16 |
| Random Number Generation Based on Ferroelectric Switching |
16 |
| Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in p-GaN Gate HEMTs |
16 |
| GaN-on-Si Quasi-Vertical Power MOSFETs |
15 |
| MoTe2: A Promising Candidate for SF6 Decomposition Gas Sensors With High Sensitivity and Selectivity |
15 |
| Short-Term and Long-Term Plasticity Mimicked in Low-Voltage Ag/GeSe/TiN Electronic Synapse |
15 |
| Nonpolar m-Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth |
15 |
| Delta Doped beta-Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts |
15 |
| High-Voltage and High-I-ON/I-OFF Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination |
15 |
| Trapping Effects in Si delta-Doped beta-Ga2O3 MESFETs on an Fe-Doped beta-Ga2O3 Substrate |
15 |
| Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit |
15 |
| Evaluation of 10-nm Bulk FinFET RF Performance-Conventional Versus NC-FinFET |
14 |
| One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed AlxOy Gate Dielectric |
14 |
| Demonstration of a Planar W-Band, kW-Level Extended Interaction Oscillator Based on a Pseudospark-Sourced Sheet Electron Beam |
14 |
| N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance |
14 |
| PCMO RRAM for Integrate-and-Fire Neuron in Spiking Neural Networks |
14 |
| Fabrication of Pd-Decorated MoSe2 Nanoflowers and Density Functional Theory Simulation Toward Ammonia Sensing |
14 |
| Compatibility of HfN Metal Gate Electrodes With Hf0.5Zr0.5O2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors |
14 |
| A 1.9-kV/2.6 m Omega.cm(2) Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V |
13 |
| Flexible Pressure Sensor With High Sensitivity and Low Hysteresis Based on a Hierarchically Microstructured Electrode |
13 |
| 3.8W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity |
13 |
| High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs |
13 |
| Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films |
13 |
| A High-Gain Inverter With Low-Temperature Poly-Si Oxide Thin-Film Transistors |
13 |
| Current Carrying Capacity of Quasi-1D ZrTe3 Van Der Waals Nanoribbons |
12 |
| 820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm(2) |
12 |
