发文分析
近年国家/地区发文量统计
| 国家/地区 | 数量 |
|---|---|
| CHINA MAINLAND | 577 |
| USA | 282 |
| South Korea | 174 |
| Taiwan | 123 |
| Japan | 65 |
| England | 60 |
| India | 49 |
| Belgium | 37 |
| GERMANY (FED REP GER) | 37 |
| France | 32 |
近年机构发文量统计
| 机构 | 数量 |
|---|---|
| CHINESE ACADEMY OF SCIENCES | 84 |
| UNIVERSITY OF CALIFORNIA SYSTEM | 70 |
| XIDIAN UNIVERSITY | 56 |
| NATIONAL YANG MING CHIAO TUNG UNIVERSITY | 49 |
| HONG KONG UNIVERSITY OF SCIENCE & TECHNOLOGY | 48 |
| PEKING UNIVERSITY | 42 |
| UNIVERSITY OF ELECTRONIC SCIENCE & TECHNOLOGY ... | 42 |
| INDIAN INSTITUTE OF TECHNOLOGY SYSTEM (IIT SYS... | 36 |
| IMEC | 35 |
| NATIONAL SUN YAT SEN UNIVERSITY | 35 |
近年文章引用他刊数据
| 文章名称 | 引用次数 |
|---|---|
| Enhancement-Mode Ga2O3 Vertical Transistors With Breakdo... | 38 |
| An Artificial Neuron Based on a Threshold Switching Memr... | 36 |
| Recessed-Gate Enhancement-Mode beta-Ga2O3 MOSFETs | 28 |
| Spin Logic Devices via Electric Field Controlled Magneti... | 27 |
| Current Aperture Vertical beta-Ga2O3 MOSFETs Fabricated ... | 27 |
| beta-Ga2O3 Delta-Doped Field-Effect Transistors With Cur... | 26 |
| Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring F... | 24 |
| 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 ... | 24 |
| Vertical Ga(2)O(3 )Schottky Barrier Diodes With Small-An... | 23 |
| First Demonstration of a Logic-Process Compatible Juncti... | 22 |
近年被他刊引用数据
| 期刊名称 | 引用次数 |
|---|---|
| IEEE T ELECTRON DEV | 1587 |
| IEEE ELECTR DEVICE L | 1317 |
| JPN J APPL PHYS | 594 |
| APPL PHYS LETT | 460 |
| IEEE J ELECTRON DEVI | 445 |
| APPL PHYS EXPRESS | 366 |
| SEMICOND SCI TECH | 277 |
| J APPL PHYS | 268 |
| SOLID STATE ELECTRON | 257 |
| ECS J SOLID STATE SC | 249 |