| Review Article: Stress in thin films and coatings: Current status, challenges, and prospects |
72 |
| Status and prospects of plasma-assisted atomic layer deposition |
26 |
| Practical guides for x-ray photoelectron spectroscopy: First steps in planning, conducting, and reporting XPS measurements |
23 |
| Functional model for analysis of ALD nucleation and quantification of area-selective deposition |
19 |
| Review Article: Catalysts design and synthesis via selective atomic layer deposition |
16 |
| Paradigm shift in thin-film growth by magnetron sputtering: From gas-ion to metal-ion irradiation of the growing film |
14 |
| Review Article: Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development |
14 |
| Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook |
13 |
| Review Article: Crystal alignment for high performance organic electronics devices |
12 |
| Vapor-deposited octadecanethiol masking layer on copper to enable area selective Hf3N4 atomic layer deposition on dielectrics studied by in situ spectroscopic ellipsometry |
11 |
| Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors |
11 |
| Review Article: Spectroscopic microreactors for heterogeneous catalysis |
11 |
| Reference-free grazing incidence x-ray fluorescence and reflectometry as a methodology for independent validation of x-ray reflectometry on ultrathin layer stacks and a depth-dependent characterization |
11 |
| Review Article: Hydrogenated graphene: A user's guide |
11 |
| Microstructure, mechanical, and tribological properties of niobium vanadium carbon nitride films |
10 |
| Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme |
9 |
| Growth and properties of epitaxial Ti1-xMgxN(001) layers |
9 |
| Thermal atomic layer etching of HfO2 using HF for fluorination and TiCl4 for ligand-exchange |
9 |
| Review Article: Atomic layer deposition of doped ZnO films |
9 |
| Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates |
8 |
| High temperature deuterium enrichment using TiC coated vanadium membranes |
7 |
| Molecular mechanisms of atomic layer etching of cobalt with sequential exposure to molecular chlorine and diketones |
7 |
| Atomic layer deposition of InN using trimethylindium and ammonia plasma |
7 |
| Measured relationship between thermodynamic pressure and refractivity for six candidate gases in laser barometry |
7 |
| Plasma-enhanced atomic layer deposition of tungsten oxide thin films using ((BuN)-Bu-t)(2)(Me2N)(2)W and O-2 plasma |
7 |
| Perspective: Nonequilibrium dynamics of localized and delocalized excitons in colloidal quantum dot solids |
7 |
| Tailoring nanopore formation in atomic layer deposited ultrathin films |
6 |
| Efficient p-i-n inorganic CsPbI3 perovskite solar cell deposited using layer-by-layer vacuum deposition |
6 |
| Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
6 |
| Sticking probabilities of H2O and Al(CH3)(3) during atomic layer deposition of Al2O3 extracted from their impact on film conformality |
6 |
| In situ XPS study of low temperature atomic layer deposition of B2O3 films on Si using BCl3 and H2O precursors |
6 |
| Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
6 |
| Responding to the growing issue of research reproducibility |
6 |
| Gas modulation refractometry for high-precision assessment of pressure under non-temperature-stabilized conditions |
6 |
| Annealing of thin Tincone films, a tin-based hybrid material deposited by molecular layer deposition, in reducing, inert, and oxidizing atmospheres |
6 |
| Improved performance and stability of In-Sn-Zn-O thin film transistor by introducing a meso-crystalline ZrO2 high-k gate insulator |
6 |
| Time evolution of ion fluxes incident at the substrate plane during reactive high-power impulse magnetron sputtering of groups IVb and VIb transition metals in Ar/N-2 |
6 |
| Quasi atomic layer etching of SiO2 using plasma fluorination for surface cleaning |
5 |
| Thermal adsorption-enhanced atomic layer etching of Si3N4 |
5 |
| Applying sputtering theory to directional atomic layer etching |
5 |
| Rapid atomic layer etching of Al2O3 using sequential exposures of hydrogen fluoride and trimethylaluminum with no purging |
5 |
| High-rate sputter deposition of electrochromic nickel oxide thin films using substrate cooling and water vapor injection |
5 |
| Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition |
5 |
| Downstream etching of silicon nitride using continuous-wave and pulsed remote plasma sources sustained in Ar/NF3/O-2 mixtures |
5 |
| Chemistry and kinetics governing hydride/chloride chemical vapor deposition of epitaxial Ge1-xSnx |
5 |
| Seamless fill of deep trenches by chemical vapor deposition: Use of a molecular growth inhibitor to eliminate pinch-off |
5 |
| Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
5 |
| Study of Ge-rich GeSbTe etching process with different halogen plasmas |
5 |
| Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature |
5 |
| Review Article: Quantum-based vacuum metrology at the National Institute of Standards and Technology |
5 |
