| beta-Ga2O3 for wide-bandgap electronics and optoelectronics |
59 |
| Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues |
53 |
| Metal oxide nanostructures for sensor applications |
29 |
| How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches |
28 |
| Terahertz radiation detectors: the state-of-the-art |
21 |
| Structural, electronic and phononic properties of PtSe2: from monolayer to bulk |
19 |
| Wide-bandgap, low-bandgap, and tandem perovskite solar cells |
18 |
| Biaxial strain tuned electronic structures and power factor in Janus transition metal dichalchogenide monolayers |
17 |
| A comprehensive device modelling of perovskite solar cell with inorganic copper iodide as hole transport material |
15 |
| The transport and optical sensing properties of MoS MoSe WS2 and WSe2 semiconducting transition metal dichalcogenides |
15 |
| A survey of acceptor dopants for beta-Ga2O3 |
15 |
| Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators |
14 |
| Shaping the spectrum of terahertz photoconductive antenna by frequency-dependent impedance modulation |
12 |
| Super-hydrophilic copper sulfide films as light absorbers for efficient solar steam generation under one sun illumination |
11 |
| Nanowire photodetectors based on wurtzite semiconductor heterostructures |
10 |
| Interlayer coupling in two-dimensional semiconductor materials |
10 |
| InAs quantum dots grown on metamorphic buffers as non-classical light sources at telecom C-band: a review |
10 |
| Synthesis and Characterization of Methylammonium Lead Iodide Perovskite and its Application in Planar Hetero-junction Devices |
9 |
| III-V quantum-dot lasers monolithically grown on silicon |
9 |
| Emergence of high quality sputtered III-nitride semiconductors and devices |
9 |
| Low voltage & controlled switching of MoS2-GO resistive layers based ReRAM for non-volatile memory applications |
9 |
| III-nitride quantum dots as single photon emitters |
9 |
| n-type dopants in (001) beta-Ga2O3 grown on (001) beta-Ga2O3 substrates by plasma-assisted molecular beam epitaxy |
9 |
| Growth and etching characteristics of (001) beta-Ga2O3 by plasma-assisted molecular beam epitaxy |
8 |
| The quantum Hall effect in the era of the new SI |
8 |
| Obtaining the circular polarization in a nanodielectric resonator antenna for photonics applications |
8 |
| Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN |
8 |
| Review of SiC crystal growth technology |
7 |
| XPS investigation of the ALD Al2O3/HgCdTe heterointerface |
7 |
| Mechanism of enhanced photocatalytic activity of Cr-doped ZnO nanoparticles revealed by photoluminescence emission and electron spin resonance |
7 |
| Fabrication technology for high light- extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC |
7 |
| Temperature-dependent growth of few layer beta-InSe and alpha-In2Se3 single crystals for optoelectronic device |
7 |
| First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE |
6 |
| Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities |
6 |
| Producing air-stable InSe nanosheet through mild oxygen plasma treatment |
6 |
| Photonic-based integrated sources and antenna arrays for broadband wireless links in terahertz communications |
6 |
| Electrical modulation of terahertz radiation using graphene-phosphorene heterostructures |
6 |
| Multi-layer elemental 2D materials: antimonene, germanene and stanene grown directly on molybdenum disulfides |
6 |
| A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs |
6 |
| Thickness and temperature dependent thermoelectric properties of Bi87Sb13 nanofilms measured with a novel measurement platform |
6 |
| Structural and thermoelectrical characterization of epitaxial Sb2Te3 high quality thin films grown by thermal evaporation |
6 |
| GaN meets organic: technologies and devices based on gallium-nitride/organic hybrid structures |
6 |
| Effect of inhomogeneous Schottky barrier height of SnO2 nanowires device |
6 |
| A vertical-gaussian doped soi-tfet with enhanced dc and analog/rf performance |
5 |
| Enhanced piezoelectric output of NiO/nanoporous GaN by suppression of internal carrier screening |
5 |
| The role of deep-red emission CulnS(2)/ZnSQDs in white light emitting diodes |
5 |
| QCAPUF: QCA-based physically unclonable function as a hardware security primitive |
5 |
| Contactless non-destructive imaging of doping density and electrical resistivity of semiconductor Si wafers using lock-in carrierography |
5 |
| Design of sub-THz traveling wave tubes for high data rate long range wireless links |
5 |
| Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric |
5 |
