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Electron Structure and Optical Properties Tuning of HfNBr/ZrNBr Heterostructure
Author: Ma, Yaqiang; Yang, Guoliang; Liu, Ming; Wang, Zhen; Dai, Xianqi
Journal: SEMICONDUCTORS. 2026; Vol. 60, Issue 4, pp. 385-395. DOI: 10.1134/S1063782625602043
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Exciton States in InGaAsP/InP Core-Shell Quantum Dots under Magnetic Fiel
Author: Hu, Min; Yao, HongYan
Journal: SEMICONDUCTORS. 2026; Vol. 60, Issue 4, pp. 443-450. DOI: 10.1134/S1063782625603838
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AlGaN-based Avalanche Photodiodes with a Graded Al Composition Multiplication Laye
Author: Hou, Fangzhong; Zhang, Liyao
Journal: SEMICONDUCTORS. 2026; Vol. 60, Issue 4, pp. 404-409. DOI: 10.1134/S1063782625604662
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Preparation and Luminescence Properties of ZnCuAlInS/ZnSe/ZnS Quantum Dot
Author: Xu, Kai; Li, Jingru; Liu, Wenyan
Journal: SEMICONDUCTORS. 2026; Vol. 60, Issue 3, pp. 276-283. DOI: 10.1134/S1063782625603474
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Design and Performance Optimization of a Nonvolatile Silicon Photonic Switch Using GST-Integrated Concentric Microring Resonator
Author: Zhu, Bingda; Guo, Lijun; Feng, Yuan
Journal: SEMICONDUCTORS. 2026; Vol. 60, Issue 2, pp. 177-184. DOI: 10.1134/S1063782625601736
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Effect of High-κ Dielectric Gate Stacks and Thickness on Electrical Performance of n-MOSFET Device
Author: Zhang, Mengfan; Wang, Danghui; Xu, Tianhan; Feng, Chaoyu
Journal: SEMICONDUCTORS. 2026; Vol. 60, Issue 1, pp. 114-123. DOI: 10.1134/S1063782625602973
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Physical Modeling of Threshold Voltage Shift during Recovery Phase in SiC-based Transistor
Author: Mao, Ling-Feng
Journal: SEMICONDUCTORS. 2025; Vol. 59, Issue 4, pp. 350-355. DOI: 10.1134/S1063782624602930
