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Bandgap engineering with carriers blocking in long-wavelength infrared photodiode
Author: He, Linxuan; Wu, Tianxiang; Wang, Xi; Zhou, Songmin; Huang, Jian; Li, Xun; Gan, Zhikai; Lin, Chun; Zhu, Liqi
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 4, pp. -. DOI: 10.1088/1361-6641/ae5683
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An analytical unified extraction method for the distribution and relaxation time of trap states by capacitance-conductance-voltage characteristics in metal oxide TFT
Author: Yu, Shunye; Li, Haoyang; Liu, Sai; Chen, Ruipeng; Liu, Jiajie; Xu, Miao; Wang, Lei; Wu, Weijing; Peng, Junbiao
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 4, pp. -. DOI: 10.1088/1361-6641/ae57cf
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A physics-based and accurate STI-LDMOS compact subcircuit model with modified drift region resistance and gate-drain capacitanc
Author: Sun, Jing; Liu, DaQuan; Li, Hang; Qian, Wensheng; Yang, Jiye; Sun, Yabin; Ye, Bingyi; Zhang, Yuhang; Shen, Yang; Li, Xiaojin
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 4, pp. -. DOI: 10.1088/1361-6641/ae5843
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Progress in ε/κ-Ga2O3 growth and device
Author: Gao, Yangyang; Wang, Yong; Xiong, Kaili; Song, Xiufeng; Li, Lin; Che, Deliang; Ma, Chengcheng
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 4, pp. -. DOI: 10.1088/1361-6641/ae1756
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Review of Ga2O3 x-ray detectors: from material properties to device application
Author: Zeng, Liru; Zhang, Zeyulin; Liu, Dinghe; Chen, Hao; Zhang, Nan; Wang, Zhaobo; Feng, Qian; Zhou, Hong; Zhang, Yachao; Chen, Dazheng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 4, pp. -. DOI: 10.1088/1361-6641/ae55bf
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A novel 1200 V SiC trench MOSFET based on superjunction and shielded gate technologies for reduced power los
Author: Zhang, Xin; Cui, Pengfei; Liu, Qirui; Hu, Canbo; Wang, Dejun
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 4, pp. -. DOI: 10.1088/1361-6641/ae5aca
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Defect-extracted correlation analysis of field-effect mobility degradation in 4H-SiC MOSFET
Author: Xia, Ziming; Li, Zehong; Xu, Zhishuo; Zhang, Xin; Zhang, Anna; Wang, Tongyang; Zheng, Yige; Jin, Zhaoqing; Zhao, Longjie; Xiao, Li; Cui, Yanyun; Wang, Xuan; Ren, Min
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 4, pp. -. DOI: 10.1088/1361-6641/ae5acb
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Impact of elevated temperatures on the switching characteristics of silicon carbide superfast ionization thyristor
Author: Zhang, Hongwei; Pu, Hongbin; Zhang, Zhao; Wang, Xi
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2026; Vol. 41, Issue 3, pp. -. DOI: 10.1088/1361-6641/ae4822
