-
Sub-band gap infrared absorption in Si implanted with Mg
Author: Wang, Mao; Shaikh, M. S.; Kentsch, U.; Heller, R.; Zhou, Shengqiang
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2023; Vol. 38, Issue 1, pp. -. DOI: 10.1088/1361-6641/aca3ca
-
Emission and capture characteristics of electron trap (E-emi=0.8 eV) in Si-doped beta-Ga2O3 epilayer
Author: Qu, Haolan; Chen, Jiaxiang; Zhang, Yu; Sui, Jin; Gu, Yitian; Deng, Yuxin; Su, Danni; Zhang, Ruohan; Lu, Xing; Zou, Xinbo
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2023; Vol. 38, Issue 1, pp. -. DOI: 10.1088/1361-6641/aca045
-
Straightforward synthesis and mechanism insight of TiO2/a'-AgVO3 heterostructure with enhanced photocatalytic activity
Author: Liu, Yangbin; Liu, Nian; Lin, Minghua; Zhou, Yun; Ouyang, Xiaoping
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2023; Vol. 38, Issue 1, pp. -. DOI: 10.1088/1361-6641/aca625
-
The interplay of process parameters and influence on the AlN films on sapphire fabricated by DC magnetron sputtering and annealing
Author: Liu, Huan; Guo, Wei
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2023; Vol. 38, Issue 1, pp. -. DOI: 10.1088/1361-6641/aca8ca
-
Low-temperature in situ deposited CuI-based hole-transporter for perovskite solar cells efficiency enhancement
Author: Li, Hang; Fu, Chao; Shi, Lei; Li, Chaorong; Pan, Jiaqi; Zhang, Wenjun
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2023; Vol. 38, Issue 1, pp. -. DOI: 10.1088/1361-6641/aca3c9
-
Design of the GaN based CAVET with SiO2-InGaN hybrid current blocking layer
Author: Li, Haiou; Kang, Dongxu; Qu, Kangchun; Liu, Xingpeng; Wan, Rongqiao
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2023; Vol. 38, Issue 1, pp. -. DOI: 10.1088/1361-6641/aca626
-
In-situ deposition of tungsten oxide hole-contact by Hot-Wire CVD and its application in dopant-free heterojunction solar cells
Author: Guo, Cong; Li, Junjun; Liu, Run; Zhang, Dongdong; Qiu, Junyang; Zhuang, Zihan; Chen, Yang; Qiu, Qingqing; Liu, Wenzhu; Huang, Yuelong; Yu, Jian; Chen, Tao
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2023; Vol. 38, Issue 1, pp. -. DOI: 10.1088/1361-6641/aca5ac
-
Investigation of thermal stability and crystallization mechanism of Er-0.03(GeTe)(0.97) phase change material
Author: Gu, Han; Wu, Weihua; Xu, Shengqing; Zhou, Xiaochen; Shen, Bo; Zhai, Jiwei
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2023; Vol. 38, Issue 1, pp. -. DOI: 10.1088/1361-6641/aca520
