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Microchannel Cooling for Performance Enhancement of GaN-on-Si HEMT With a Low Rj-a of 13.5 K/
Author: Zhou, Jiajun; Feng, Xin; Zhang, Weihang; Dang, Kui; Zhang, Yachao; Ren, Zeyang; He, Yanjing; Liu, Xianhe; Zhou, Hong; Liu, Zhihong; Hao, Yue; Zhang, Jincheng
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 85-92. DOI: 10.1109/JEDS.2026.3658238
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Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMT
Author: Liu, Ziheng; He, Jiayin; Peng, Hongjie; Gao, Ju; Xia, Wenbo; Ao, Chengkang; Wang, Jinyan; Wang, Maojun; Wei, Jin; Xie, Yong
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 113-121. DOI: 10.1109/JEDS.2026.3661537
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Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarit
Author: Huo, Ran; Ou, Shijun; Wu, Zhehao; Zhang, Han; Lv, Bowen; Shao, Yvyang; Ma, Zichao; Zhang, Min; Chan, Mansun; Zhou, Changjian
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 93-101. DOI: 10.1109/JEDS.2026.3659128
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Research on 4H-SiC Photoconductive Semiconductor Switch Employing Composite Anti-Reflection Coatin
Author: Lv, Haojie; Yu, Xiaoqing; Li, Lun; Zhang, Peiyu
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 137-144. DOI: 10.1109/JEDS.2026.3662337
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Evaluation of Interface Traps Within Drift Region in LDMOS Using a Multi-Pulse Test Metho
Author: Guo, Qianwen; Cao, Jiawei; Zhou, Ke; Liu, Fang; Zhao, Dongyan; Chen, Yanning; Wu, Bo; Deng, Yongfeng; Gao, Dawei; Ke, Xugang; Li, Junkang; Zhang, Rui
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 145-150. DOI: 10.1109/JEDS.2026.3661617
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Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealin
Author: Xiang, Liang; Yan, Gangping; Yang, Hong; Yang, Shangbo; Xu, Gaobo; Sun, Mingyang; Wang, Guilei; Yin, Huaxiang; Wang, Xiaolei; Luo, Jun; Wang, Wenwu
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2026; Vol. 14, Issue , pp. 30-35. DOI: 10.1109/JEDS.2025.3642582
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Understanding Frequency Dependence of Trap Generation Under AC Positive Bias Temperature Instability Stress in Si n-FinFET
Author: Shi, Yunfei; Chang, Hao; Yang, Hong; Zhang, Qiangzhu; Liu, Qianqian; Tang, Bo; Zhou, Longda; Ji, Zhigang; Li, Junjie; He, Xiaobin; Li, Junfeng; Yin, Huaxiang; Wang, Xiaolei; Luo, Jun; Wang, Wenwu
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 450-455. DOI: 10.1109/JEDS.2025.3567049
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Impact of the Schottky Barrier Height on the Carrier Velocity Overshoot Behaviors in SOI nMOSFETs With Metal Source/Drai
Author: Su, Rui; Jing, Yan; Zhang, Xinyi; Jiang, Yi; Gao, Dawei; Schwarzenbach, Walter; Nguyen, Bich-Yen; Li, Junkang; Robertson, John; Zhang, Rui
Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 464-470. DOI: 10.1109/JEDS.2025.3569242
