发文分析
近年国家/地区发文量统计
| 国家/地区 | 数量 |
|---|---|
| CHINA MAINLAND | 168 |
| USA | 99 |
| Taiwan | 98 |
| South Korea | 74 |
| Japan | 61 |
| India | 40 |
| France | 29 |
| GERMANY (FED REP GER) | 27 |
| Switzerland | 23 |
| Belgium | 20 |
近年机构发文量统计
| 机构 | 数量 |
|---|---|
| NATIONAL YANG MING CHIAO TUNG UNIVERSITY | 35 |
| INDIAN INSTITUTE OF TECHNOLOGY SYSTEM (IIT SYS... | 22 |
| CHINESE ACADEMY OF SCIENCES | 20 |
| ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE | 18 |
| NATIONAL TSING HUA UNIVERSITY | 17 |
| UNIVERSITY OF ELECTRONIC SCIENCE & TECHNOLOGY ... | 17 |
| NATIONAL CHENG KUNG UNIVERSITY | 15 |
| SEOUL NATIONAL UNIVERSITY (SNU) | 15 |
| SOUTH CHINA UNIVERSITY OF TECHNOLOGY | 15 |
| PEKING UNIVERSITY | 14 |
近年文章引用他刊数据
| 文章名称 | 引用次数 |
|---|---|
| FinFET Versus Gate-All-Around Nanowire FET: Performance,... | 21 |
| Characterization and Compact Modeling of Nanometer CMOS ... | 19 |
| Characterization and Modeling of 28-nm Bulk CMOS Technol... | 14 |
| Cryogenic Temperature Characterization of a 28-nm FD-SOI... | 11 |
| Hysteresis Reduction in Negative Capacitance Ge PFETs En... | 11 |
| Tunneling Transistors Based on MoS2/MoTe2 Van der Waals ... | 11 |
| Direct Correlation of Ferroelectric Properties and Memor... | 10 |
| Ferroelectric HfO2 Tunnel Junction Memory With High TER ... | 10 |
| Development and Fabrication of AlGaInP-Based Flip-Chip M... | 10 |
| Experimental Investigations of State-of-the-Art 650-V Cl... | 10 |
近年被他刊引用数据
| 期刊名称 | 引用次数 |
|---|---|
| IEEE T ELECTRON DEV | 140 |
| IEEE J ELECTRON DEVI | 75 |
| IEEE ELECTR DEVICE L | 59 |
| SEMICOND SCI TECH | 36 |
| IEEE ACCESS | 29 |
| JPN J APPL PHYS | 27 |
| SOLID STATE ELECTRON | 22 |
| APPL PHYS LETT | 20 |
| MICROMACHINES-BASEL | 20 |
| J APPL PHYS | 18 |