Journal Of Vacuum Science And Technology B:nanotechnology And Microelectronics

Journal Of Vacuum Science And Technology B:nanotechnology And Microelectronics

真空科学与技术杂志B:纳米技术与微电子学

  • 4区 中科院分区

期刊简介

《Journal Of Vacuum Science And Technology B:nanotechnology And Microelectronics》是由AVS Science and Technology Society出版社于1983年创办的英文国际期刊(ISSN: 2166-2746,E-ISSN: 2166-2754),该期刊长期致力于工程:电子与电气领域的创新研究,主要研究方向为Materials Science-Materials Chemistry。作为SCI、SCIE收录期刊(中科院 4区),本刊采用OA未开放获取模式(OA占比0.1270...%),以发表工程:电子与电气领域等方向的原创性研究为核心(研究类文章占比0.00%%)。成果覆盖Web of ScienceWeb of Science、Scopus等国际权威数据库,为学者提供推动工程技术领域高水平交流平台。

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投稿提示

Journal Of Vacuum Science And Technology B:nanotechnology And Microelectronics该刊近年未被列入国际预警名单,录用竞争适中,主题需确保紧密契合工程技术前沿。投稿策略提示:避开学术会议旺季投稿以缩短周期,语言建议专业润色提升可读性。

  • 工程技术 大类学科
  • English 出版语言
  • 是否预警
  • SCI、SCIE 期刊收录

中科院分区

《新锐期刊分区表》(2026年3月发布)

Top期刊 综述期刊 大类学科 小类学科
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 PHYSICS, APPLIED 物理:应用
4区 4区 4区

期刊分区表(2025年3月升级版)

Top期刊 综述期刊 大类学科 小类学科
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 PHYSICS, APPLIED 物理:应用
4区 4区 4区

期刊分区表(2023年12月升级版)

Top期刊 综述期刊 大类学科 小类学科
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 PHYSICS, APPLIED 物理:应用
4区 4区 4区

期刊分区表(2022年12月升级版)

Top期刊 综述期刊 大类学科 小类学科
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 PHYSICS, APPLIED 物理:应用
4区 4区 4区

期刊分区表(2021年12月升级版)

Top期刊 综述期刊 大类学科 小类学科
工程技术
4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 PHYSICS, APPLIED 物理:应用
4区 4区 4区

CiteScore(2026年6月最新版)

CiteScore SJR SNIP CiteScore 排名
CiteScore:2.5 SJR:0.359 SNIP:0.689
学科类别 分区 排名 百分位
大类:Physics and Astronomy 小类:Instrumentation Q2 99 / 206

52%

大类:Physics and Astronomy 小类:Electrical and Electronic Engineering Q3 545 / 1030

47%

大类:Physics and Astronomy 小类:Electronic, Optical and Magnetic Materials Q3 198 / 318

37%

大类:Physics and Astronomy 小类:Surfaces, Coatings and Films Q3 89 / 141

37%

大类:Physics and Astronomy 小类:Materials Chemistry Q3 212 / 327

35%

大类:Physics and Astronomy 小类:Process Chemistry and Technology Q3 56 / 84

33%

期刊发文

  • Optimizing photoresist linewidth roughness in ion beam shaping: A systematic study of stage angular configuratio

    Author: Wu, Xiaojian; Dong, Shuo; Xu, Kaidong; Zhuang, Shiwei

    Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 3, pp. -. DOI: 10.1116/6.0005220

  • Dual-gate Hf-doped InZnO field-effect transistors with sub-0.1 V threshold voltage shift under bias stres

    Author: Li, Tiaoyang; Hu, Rongling

    Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 3, pp. -. DOI: 10.1116/6.0005363

  • Multiphysics simulation of non-uniform magnetic fields' effect on plasma uniformity in capacitively coupled plasma

    Author: Cui, Yu-Meng; Liu, Ze-Xuan; Zhang, Si-Bo; Chen, Long; Zhang, Quan-Zhi

    Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 3, pp. -. DOI: 10.1116/6.0005370

  • Parametric study and performance evaluation of the louver structure in the pumping pipeline of electron beam evaporation coating equipmen

    Author: Yuan, Zuhao; Li, Yong; She, Pengcheng; Gong, Jun; Shi, Renping; He, Qiufu; Liu, Fangting; Li, Junhui

    Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 3, pp. -. DOI: 10.1116/6.0005283

  • Ag-doping induced enhancement in power factor of flexible n-type Bi2Te2.7Se0.3 thin film

    Author: Tian, Xujiang; Wu, Chonghao; Ma, Congming; Liang, Shaojun; Zhu, Hanming; Yue, Song

    Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 3, pp. -. DOI: 10.1116/6.0005314

  • Study on the imaging of bright-field and dark-field for contact holes in extreme ultraviolet lithography considering stage vibration effect

    Author: Shen, Hao; Zhang, Libin; Wang, Jiashuo; Rui, Dinghai; Su, Yajuan; Wei, Yayi

    Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 3, pp. -. DOI: 10.1116/6.0005261

  • Optimization of key process parameters for cobalt sputtering in 0.11 μm CMOS device

    Author: Wang, Furong; Xu, Shaohui; Song, Zhenhua; Zhang, Yan; Zhou, Yaohui; Li, Mincheng

    Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 2, pp. -. DOI: 10.1116/6.0005238

  • Simulation and deposition experimental study of a microwave plasma chemical vapor deposition device with an oblique cone structure desig

    Author: Hu, Jibo; Zhu, Xiaoxiang; Zhao, Shusen; Wang, Huibin; Zhao, Yapei

    Journal: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 2026; Vol. 44, Issue 2, pp. -. DOI: 10.1116/6.0004980