Ieee Transactions On Electron Devices投稿须知

期刊简介

《Ieee Transactions On Electron Devices》是由Institute of Electrical and Electronics Engineers Inc.出版社于1954年创办的英文国际期刊（ISSN: 0018-9383，E-ISSN: 1557-9646），该期刊长期致力于物理：应用领域的创新研究，主要研究方向为工程技术-工程：电子与电气。作为SCIE收录期刊（JCR分区 Q2，中科院 2区），本刊采用OA未开放获取模式（OA占比0.0017...%），以发表物理：应用领域等方向的原创性研究为核心（研究类文章占比100.00%%）。凭借严格的同行评审与高效编辑流程，期刊年载文量精选控制在1084篇，确保学术质量与前沿性。成果覆盖Web of Science、Scopus等国际权威数据库，为学者提供推动工程技术领域高水平交流平台。

投稿咨询

投稿提示

Ieee Transactions On Electron Devices审稿周期约为约4.7个月。该刊近年未被列入国际预警名单，年发文量约1084篇，录用竞争适中，主题需确保紧密契合工程技术前沿。投稿策略提示：避开学术会议旺季投稿以缩短周期，语言建议专业润色提升可读性。

工程技术 大类学科
English 出版语言
否是否预警
SCIE 期刊收录
1084 发文量

中科院分区

中科院 SCI 期刊分区 2023年12月升级版

Top期刊	综述期刊	大类学科	小类学科
否	否	工程技术 2区	PHYSICS, APPLIED 物理：应用 ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 2区 3区

中科院 SCI 期刊分区 2022年12月升级版

Top期刊	综述期刊	大类学科	小类学科
否	否	工程技术 2区	PHYSICS, APPLIED 物理：应用 ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 2区 3区

JCR分区

按JIF指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q2	143 / 352	59.5%
学科：PHYSICS, APPLIED	SCIE	Q2	68 / 179	62.3%

按JCI指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q2	145 / 354	59.18%
学科：PHYSICS, APPLIED	SCIE	Q2	61 / 179	66.2%

CiteScore

SJR

SNIP

CiteScore 排名

CiteScore：5.8

SJR：0.785

SNIP：1.223

学科类别	分区	排名	百分位
大类：Engineering 小类：Electrical and Electronic Engineering	Q2	221 / 797	72%
大类：Engineering 小类：Electronic, Optical and Magnetic Materials	Q2	82 / 284	71%

期刊发文

Suppression of Mode Competition in a Triaxial Klystron Amplifier With an Improved Three-Gap Bunching Cavity
Author: Yang, Fuxiang; Ge, Xingjun; Dang, Fangchao; He, Juntao; Ju, Jinchuan; Zhang, Xiaoping; Zhou, Yunxiao

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023; Vol. , Issue , pp. -. DOI: 10.1109/TED.2023.3263151
Surface-Potential-Based Drain Current Model for Ambipolar Organic TFTs
Author: He, Hongyu; Yin, Junli; Lin, Xinnan; Zhang, Shengdong

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023; Vol. , Issue , pp. -. DOI: 10.1109/TED.2023.3264718
Electrical Performance Enhancement and Low-Frequency Noise Estimation of In2O3-Based Thin Film Transistor Based on Doping Engineering
Author: Wu, Xiaoyu; He, Gang; Wang, Wenhao; Wang, Leini; Xu, Xiaofen; Gao, Qian; Liu, Yanmei; Jiang, Shanshan

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023; Vol. 70, Issue 1, pp. 105-112. DOI: 10.1109/TED.2022.3220482
Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs
Author: Chao, Xin; Tang, Chengkang; Tan, Jingjing; Wang, Chen; Sun, QingQing; Zhang, David Wei

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023; Vol. 70, Issue 1, pp. 25-30. DOI: 10.1109/TED.2022.3220498
A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET With Improved Accuracy and Convergence Capability
Author: Yang, Tongtong; Li, Xianbing; Yin, Sen; Wang, Yan; Yue, Ruifeng

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023; Vol. 70, Issue 1, pp. 4-12. DOI: 10.1109/TED.2022.3220481
A Refined Ladder Transmission Line Model for the Extraction of Significantly Low Specific Contact Resistivity
Author: Sun, Xianglie; Luo, Jun; Liu, Yaodong; Xu, Jing; Gao, Jianfeng; Liu, Jinbiao; Zhou, Xuebing; He, Yanping; Kong, Mengjuan; Li, Yongliang; Li, Junfeng; Wang, Wenwu; Ye, Tianchun

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023; Vol. 70, Issue 1, pp. 209-214. DOI: 10.1109/TED.2022.3221380
Analysis of Breakdown-Voltage Increase on SiC Junction Barrier Schottky Diode Under Negative Bias Stress
Author: Jin, Fu-Yuan; Chen, Po-Hsun; Hung, Wei-Chun; Hung, Wei-Chieh; Chang, Chin-Han; Ciou, Fong-Min; Lin, Yu-Shan; Chang, Kai-Chun; Lin, Yun-Hsuan; Kuo, Ting-Tzu; Chen, Kuan-Hsu; Yeh, Chien-Hung; Chang, Ting-Chang

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023; Vol. 70, Issue 1, pp. 191-195. DOI: 10.1109/TED.2022.3223645
Novel Snapback-Free Shorted-Anode SOI-LIGBT With Shallow Oxide Trench and Adaptive Electron Channel
Author: Wu, Lijuan; Song, Xuanting; Zhang, Banghui; Liu, Heng; Liu, Qing; Liu, Yangzhi; Qiu, Tao

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2023; Vol. 70, Issue 1, pp. 185-190. DOI: 10.1109/TED.2022.3223325

Ieee Transactions On Electron Devices