| Fully Inkjet-Printed Photodetector Using a Graphene/Perovskite/Graphene Heterostructure |
42 |
| Effects of Postannealing on the Characteristics and Reliability of Polyfluorene Organic Light-Emitting Diodes |
37 |
| Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance |
28 |
| Demonstration of Constant 8 W/mm Power Density at and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs |
27 |
| Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance |
22 |
| 2-D Layered Materials for Next-Generation Electronics: Opportunities and Challenges |
20 |
| High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty |
20 |
| BTI Analysis Tool-Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation |
20 |
| Improved Switching Stability and the Effect of an Internal Series Resistor in HfO2/TiOX Bilayer ReRAM Cells |
18 |
| Design and Investigation of Charge-Plasma-Based Work Function Engineered Dual-Metal-Heterogeneous Gate Si-Si0.55Ge0.45 GAA-Cylindrical NWTFET for Ambipolar Analysis |
17 |
| Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing |
17 |
| Physical Insights on Negative Capacitance Transistors in Nonhysteresis and Hysteresis Regimes: MFMIS Versus MFIS Structures |
17 |
| Numerical Investigation of Short-ChannelEffects n Negative Capacitance MFIS and MFMIS Transistors: Subthreshold Behavior |
17 |
| A 256 x 100-kfps, 61% Fill-Factor SPAD Image Sensor for Time-Resolved Microscopy Applications |
16 |
| 2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure |
15 |
| Double-Gate TFET With Vertical Channel Sandwiched by Lightly Doped Si |
15 |
| Drain-Engineered TFET With Fully Suppressed Ambipolarity for High-Frequency Application |
15 |
| Cryogenic MOS Transistor Model |
15 |
| Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs |
15 |
| Demonstration of Unsupervised Learning With Spike-Timing-Dependent Plasticity Using a TFT-Type NOR Flash Memory Array |
15 |
| Performance Assessment of the Charge-Plasma-Based Cylindrical GAA Vertical Nanowire TFET With Impact of Interface Trap Charges |
15 |
| Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC-AC Experimental Conditions |
15 |
| Fractional Fowler-Nordheim Law for Field Emission From Rough Surface With Nonparabolic Energy Dispersion |
14 |
| Layout Design Correlated With Self-Heating Effect in Stacked Nanosheet Transistors |
14 |
| Compact Modeling of Drain Current, Charges, and Capacitances in Long-Channel Gate-All-Around Negative Capacitance MFIS Transistor |
14 |
| Design and Investigation of a Novel Charge Plasma-Based Core-Shell Ring-TFET: Analog and Linearity Analysis |
13 |
| Dirac Electrons at the Source: Breaking the 60-mV/Decade Switching Limit |
13 |
| Evaluation of Low-Temperature Saturation Velocity in beta-(AlXGa1-X)(2)O-3/Ga2O3 Modulation-Doped Field-Effect Transistors |
13 |
| Modeling, Simulation, Fabrication, and Characterization of a 10-mu W/cm(2) Class Si-Nanowire Thermoelectric Generator for IoT Applications |
13 |
| Performance and V-TH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack |
12 |
| Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing |
12 |
| Frontiers in Thermionic Cathode Research |
12 |
| Stability and Reliability of Lateral GaN Power Field-Effect Transistors |
12 |
| Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability |
12 |
| Influence of Humidity on the Performance of Composite Polymer Electrolyte-Gated Field-Effect Transistors and Circuits |
12 |
| Study on the Thermal and Optical Performance of Quantum Dot White Light-Emitting Diodes Using Metal-Based Inverted Packaging Structure |
12 |
| Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices |
12 |
| A Comparative Study on the Electrical Properties of Vertical ((2)over-bar01) and (010) beta-Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates |
12 |
| High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2 Gate Dielectric |
12 |
| Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design |
12 |
| Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type p-GaN Gate HEMTs |
11 |
| Ambient Temperature-Induced Device Self-Heating Effects on Multi-Fin Si n-FinFET Performance |
11 |
| Two-Wave Ka-Band Nanosecond Relativistic Cherenkov Oscillator |
11 |
| ASM GaN: Industry Standard Model for GaN RF and Power Devices-Part 1: DC, CV, and RF Model |
11 |
| Numerical Investigation on the Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Superlattice p-Type Doping |
11 |
| A High-Performance Inverted-C Tunnel Junction FET With Source-Channel Overlap Pockets |
11 |
| Assessing MPPT Techniques on Hot-Spotted and Partially Shaded Photovoltaic Modules: Comprehensive Review Based on Experimental Data |
11 |
| Engineering Negative Differential Resistance in NCFETs for Analog Applications |
11 |
| Analytical Model for the Threshold Voltage of p-(Al) GaN High-Electron-Mobility Transistors |
11 |
| True Random Number Generation Using Read Noise of Flash Memory Cells |
10 |
