发文分析
近年国家/地区发文量统计
| 国家/地区 | 数量 |
|---|---|
| CHINA MAINLAND | 741 |
| USA | 455 |
| India | 399 |
| Taiwan | 232 |
| South Korea | 181 |
| GERMANY (FED REP GER) | 149 |
| Japan | 123 |
| Italy | 111 |
| France | 110 |
| England | 100 |
近年机构发文量统计
| 机构 | 数量 |
|---|---|
| INDIAN INSTITUTE OF TECHNOLOGY SYSTEM (IIT SYS... | 239 |
| UNIVERSITY OF ELECTRONIC SCIENCE & TECHNOLOGY ... | 123 |
| CHINESE ACADEMY OF SCIENCES | 92 |
| NATIONAL YANG MING CHIAO TUNG UNIVERSITY | 81 |
| UNIVERSITY OF CALIFORNIA SYSTEM | 76 |
| IMEC | 74 |
| PEKING UNIVERSITY | 66 |
| XIDIAN UNIVERSITY | 58 |
| CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (... | 57 |
| NATIONAL CHENG KUNG UNIVERSITY | 50 |
近年文章引用他刊数据
| 文章名称 | 引用次数 |
|---|---|
| Fully Inkjet-Printed Photodetector Using a Graphene/Pero... | 42 |
| Effects of Postannealing on the Characteristics and Reli... | 37 |
| Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectri... | 28 |
| Demonstration of Constant 8 W/mm Power Density at and 94... | 27 |
| Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large... | 22 |
| 2-D Layered Materials for Next-Generation Electronics: O... | 20 |
| High Endurance Ferroelectric Hafnium Oxide-Based FeFET M... | 20 |
| BTI Analysis Tool-Modeling of NBTI DC, AC Stress and Rec... | 20 |
| Improved Switching Stability and the Effect of an Intern... | 18 |
| Design and Investigation of Charge-Plasma-Based Work Fun... | 17 |
近年被他刊引用数据
| 期刊名称 | 引用次数 |
|---|---|
| IEEE T ELECTRON DEV | 3214 |
| IEEE ELECTR DEVICE L | 865 |
| JPN J APPL PHYS | 565 |
| IEEE J ELECTRON DEVI | 499 |
| SOLID STATE ELECTRON | 431 |
| IEEE ACCESS | 422 |
| SEMICOND SCI TECH | 412 |
| J APPL PHYS | 400 |
| APPL PHYS LETT | 388 |
| J COMPUT ELECTRON | 284 |