Ieee Transactions On Electron Devices

Ieee Transactions On Electron Devices

IEEE Transactions On Electron Devices

  • 2区 中科院分区
  • Q2 JCR分区

发文分析

近年国家/地区发文量统计

国家/地区 数量
CHINA MAINLAND 741
USA 455
India 399
Taiwan 232
South Korea 181
GERMANY (FED REP GER) 149
Japan 123
Italy 111
France 110
England 100

近年文章引用他刊数据

文章名称 引用次数
Fully Inkjet-Printed Photodetector Using a Graphene/Pero... 42
Effects of Postannealing on the Characteristics and Reli... 37
Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectri... 28
Demonstration of Constant 8 W/mm Power Density at and 94... 27
Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large... 22
2-D Layered Materials for Next-Generation Electronics: O... 20
High Endurance Ferroelectric Hafnium Oxide-Based FeFET M... 20
BTI Analysis Tool-Modeling of NBTI DC, AC Stress and Rec... 20
Improved Switching Stability and the Effect of an Intern... 18
Design and Investigation of Charge-Plasma-Based Work Fun... 17

近年被他刊引用数据

期刊名称 引用次数
IEEE T ELECTRON DEV 3214
IEEE ELECTR DEVICE L 865
JPN J APPL PHYS 565
IEEE J ELECTRON DEVI 499
SOLID STATE ELECTRON 431
IEEE ACCESS 422
SEMICOND SCI TECH 412
J APPL PHYS 400
APPL PHYS LETT 388
J COMPUT ELECTRON 284