Ieee Transactions On Device And Materials Reliability投稿须知

期刊简介

《Ieee Transactions On Device And Materials Reliability》是由Institute of Electrical and Electronics Engineers Inc.出版社于2001年创办的英文国际期刊（ISSN: 1530-4388，E-ISSN: 1558-2574），该期刊长期致力于工程：电子与电气领域的创新研究，主要研究方向为工程技术-工程：电子与电气。作为SCI、SCIE收录期刊（JCR分区 Q3，中科院 3区），本刊采用OA未开放获取模式（OA占比%），以发表工程：电子与电气领域等方向的原创性研究为核心（研究类文章占比100.00%%）。凭借严格的同行评审与高效编辑流程，期刊年载文量精选控制在112篇，确保学术质量与前沿性。成果覆盖Web of ScienceWeb of Science、Scopus等国际权威数据库，为学者提供推动工程技术领域高水平交流平台。

投稿咨询

投稿提示

Ieee Transactions On Device And Materials Reliability审稿周期约为较慢,6-12周。该刊近年未被列入国际预警名单，年发文量约112篇，录用竞争适中，主题需确保紧密契合工程技术前沿。投稿策略提示：避开学术会议旺季投稿以缩短周期，语言建议专业润色提升可读性。

工程技术 大类学科
English 出版语言
否是否预警
SCI、SCIE 期刊收录
112 发文量

中科院分区

《新锐期刊分区表》（2026年3月发布）

Top期刊	综述期刊	大类学科	小类学科
否	否	工程技术 3区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 PHYSICS, APPLIED 物理：应用 3区 3区

期刊分区表（2025年3月升级版）

Top期刊	综述期刊	大类学科	小类学科
否	否	工程技术 3区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 PHYSICS, APPLIED 物理：应用 3区 3区

期刊分区表（2023年12月升级版）

Top期刊	综述期刊	大类学科	小类学科
否	否	工程技术 3区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 PHYSICS, APPLIED 物理：应用 3区 3区

期刊分区表（2022年12月升级版）

Top期刊	综述期刊	大类学科	小类学科
否	否	工程技术 3区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 PHYSICS, APPLIED 物理：应用 3区 3区

期刊分区表（2021年12月升级版）

Top期刊	综述期刊	大类学科	小类学科
否	否	工程技术 3区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 PHYSICS, APPLIED 物理：应用 3区 3区

JCR分区

2025-2026年最新版

按JCI指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	186 / 369	49.7
学科：PHYSICS, APPLIED	SCIE	Q3	107 / 191	44.2
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	193 / 371	48.11
学科：PHYSICS, APPLIED	SCIE	Q2	93 / 191	51.57

2024-2025年最新版

按JCI指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	198 / 368	46.3
学科：PHYSICS, APPLIED	SCIE	Q3	114 / 187	39.3
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	192 / 368	47.96
学科：PHYSICS, APPLIED	SCIE	Q3	99 / 187	47.33

2023-2024年最新版

按JCI指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q2	165 / 352	53.3
学科：PHYSICS, APPLIED	SCIE	Q2	87 / 179	51.7
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	186 / 354	47.6
学科：PHYSICS, APPLIED	SCIE	Q3	99 / 179	44.97

CiteScore（2026年6月最新版）

CiteScore

SJR

SNIP

CiteScore 排名

CiteScore：4.6

SJR：0.451

SNIP：1.367

学科类别	分区	排名	百分位
大类：Engineering 小类：Safety, Risk, Reliability and Quality	Q2	83 / 282	70%
大类：Engineering 小类：Electrical and Electronic Engineering	Q2	354 / 1030	65%
大类：Engineering 小类：Electronic, Optical and Magnetic Materials	Q2	139 / 318	56%

期刊发文

Drain Field Plate Effects in p-GaN HEMTs During Surge Voltage Hard Switchin
Author: Zhou, Jinggui; Lei, Juan; Liu, Yuqi; Li, Xuan; Zhou, Qi; Zhang, Bo

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 309-314. DOI: 10.1109/TDMR.2026.3652854
Design and Fabrication of FS-IGBTs With Enhanced Ruggedness and the Influence of Circuit Parameters on Short-Circui
Author: Zhang, Jingping; Luo, Houcai; Wu, Huan; Zheng, Bofeng; Zhang, Guoqi; Chen, Xianping

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 9-16. DOI: 10.1109/TDMR.2025.3562558
Remaining Useful Life Prediction of Electrolytic Capacitors Incorporating Data-Driven and Model-Based Method
Author: Yi, Jianmin; Wang, Hao; Ma, Cunbao

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 334-342. DOI: 10.1109/TDMR.2026.3666475
TCAD Investigation on a Novel SiC Trench MOSFET With Integrated N+-PolySi/SiC Heterojunction Diode for Improved Third-Quadrant and High-Temperature Performance
Author: Yi, Bo; Zhang, Gaolei; Wu, Xinyi; Li, Huan; Cheng, Junji; Huang, Haimeng; Kong, Moufu; Yang, Hongqiang

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 17-23. DOI: 10.1109/TDMR.2025.3641286
Comparative Study on the Performance of Digital Low-Light EBAPS Devices Based on Different Multi-Alkali Photocathode Material
Author: Yang, Shiqi; Pang, Hongli; Li, Junqi; Deng, Huabing; Cheng, Xue; Gao, Yuyong; Deng, Changbao; Li, Yaobin; Hu, Liangxing

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 54-58. DOI: 10.1109/TDMR.2025.3635580
Radiation-Hardened SRAM Designs for Self-Recovery From all Single- and Double-Node Upset
Author: Yan, Aibin; Li, Jinpeng; Li, Kun; Wang, Wenhao; Huang, Zhengfeng; Ni, Tianming; Wang, Qijun; Girard, Patrick; Wen, Xiaoqing

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 167-177. DOI: 10.1109/TDMR.2025.3641827
Package-Level Electro-Thermal Simulation With Transient Thermal Resistance Model for Surge Stress Failure Analysis of SiC MOSFE
Author: Xiang, Zaiman; Luo, Tao; Wang, Wenbo; Sun, Bo; Sun, Botao; Zhang, Qingchun; Zhang, Guoqi; Fan, Jiajie

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 42-53. DOI: 10.1109/TDMR.2026.3655032
SiC MOSFET Gate-Oxide and SiC/SiO2 Interface Defect Charge Movement Based on the Hi-Lo CISS-VG Method Under HTGB Stres
Author: Xia, Ziming; Li, Zehong; Zhang, Anna; Zhang, Xin; Zhao, Yishang; Yang, Yang; Wang, Tongyang; Zheng, Yige; Zhao, Longjie; Cui, Yanyun; Xiao, Li; Ren, Min

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2026; Vol. 26, Issue 1, pp. 24-30. DOI: 10.1109/TDMR.2026.3652851

Ieee Transactions On Device And Materials Reliability