Microelectronics Reliability

Microelectronics Reliability

微电子可靠性

  • 4区 中科院分区
  • Q3 JCR分区

发文分析

近年文章引用他刊数据

文章名称 引用次数
Comphy - A compact-physics framework for unified modelin... 25
An improved unscented particle filter approach for lithi... 25
Threshold voltage peculiarities and bias temperature ins... 21
Identification of oxide defects in semiconductor devices... 16
Controversial issues in negative bias temperature instab... 13
An Android mutation malware detection based on deep lear... 13
A review of NBTI mechanisms and models 12
New dynamic electro-thermo-optical model of power LEDs 12
Measurement considerations for evaluating BTI effects in... 11
Border traps and bias-temperature instabilities in MOS d... 10

近年被他刊引用数据

期刊名称 引用次数
MICROELECTRON RELIAB 512
IEEE T ELECTRON DEV 235
J MATER SCI-MATER EL 205
IEEE ACCESS 197
IEEE T COMP PACK MAN 120
IEEE T POWER ELECTR 120
J ELECTRON MATER 103
J ALLOY COMPD 101
IEEE T DEVICE MAT RE 100
ENERGIES 87